QS5U27 ROHM Co. Ltd., QS5U27 Datasheet

no-image

QS5U27

Manufacturer Part Number
QS5U27
Description
2.5v Drive Pch Sbd Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QS5U27
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
QS5U27TR
Manufacturer:
ROHM
Quantity:
6 862
Part Number:
QS5U27TR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistor
2.5V Drive Pch+SBD MOS FET
QS5U27
Silicon P-channel MOS FET
Schottky Barrier DIODE
1) The QS5U27 combines Pch MOS FET with a
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
load switch, DC/DC conversion
Type
QS5U27
Applications
Structure
Features
Packaging specifications
Schottky barrier diode in a TSMT5 package.
Package
Code
Basic ordering unit (pieces)
Taping
3000
TR
Equivalent circuit
∗ A protection diode has been buitt in between the gate and
∗1 ESD protection diode
∗2 Body diode
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
External dimensions (Unit : mm)
TSMT5
(5)
(1)
(1)
0.95
Abbreviated symbol : U27
∗1
(5)
(2)
2.9
1.9
0.4
(2)
0.95
(4)
(3)
∗2
Each lead has same dimensions
(4)
(3)
1.0MAX
0.16
0.85
0.7
Rev.A
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
0 ~ 0.1
QS5U27
1/4

Related parts for QS5U27

QS5U27 Summary of contents

Page 1

... QS5U27 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS5U27 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. Applications ...

Page 2

... Min. Typ. Max. Unit − − −1 =−0.75A Min. Typ. Max. Unit − − 0. =1.0A F − − µA 200 V =20V R QS5U27 ° °C °C Conditions =0V DS =0V GS =0V GS =−1mA D =−4.5V GS =−4V GS =−2.5V GS =−0.75A ...

Page 3

... C iss 100 C oss C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : −V (V) DS Fig.8 Typical Capacitance vs. Drain-Source Voltage QS5U27 1000 =− Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25° DRAIN CURRENT : −I (A) D Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 1000 Ta=25° ...

Page 4

... Fig.13 Gate Charge Measurement Circuit D.U. d(on) Fig.12 Switching Waveforms D.U. Fig.14 Gate Charge Waveforms QS5U27 Pulse Width 10% 50% 50% 90% 10% 10% 90% 90 d(off off Charge Rev.A 4/4 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords