QS5U28 ROHM Co. Ltd., QS5U28 Datasheet

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... Drive Pch+SBD MOS FET QS5U28 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. Applications ...

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... R = 10Ω G Min. Typ. Max. Unit − − −1.2 = −1. Min. Typ. Max. Unit − − = −1.0V 0. − − µA 200 V = 20V R QS5U28 Conditions = −1mA D = −4. −4. −2. −1A D Conditions = 0V GS Conditions Rev.A 2/4 ...

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... Ta=25°C f=1MH V = 100 0.01 0 DRAIN-SOURCE VOLTAGE : −V Fig.8 Typical Capacitance vs. Drain-Source Voltage QS5U28 1000 Ta=125°C 75°C 25°C −25°C 100 10 0.01 0 DRAIN CURRENT : −I Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 1000 100 =−2.5V ...

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... Fig.13 Gate Charge Measurement Circuit D.U. d(on) Fig.12 Switching Waveforms D.U. Fig.14 Gate Charge Waveforms QS5U28 Pulse Width 10% 50% 50% 90% 10% 10% 90% 90 d(off off Charge Rev.A 4/4 ...

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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...