NTZD3154N ON Semiconductor, NTZD3154N Datasheet - Page 3
NTZD3154N
Manufacturer Part Number
NTZD3154N
Description
Small Signal Mosfet 20 V, 540 Ma, Dual Nchannel
Manufacturer
ON Semiconductor
Datasheet
1.NTZD3154N.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTZD3154NT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTZD3154NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NTZD3154NT2G
Manufacturer:
ON Semiconductor
Quantity:
2 950
Company:
Part Number:
NTZD3154NT5G
Manufacturer:
ON
Quantity:
8 000
Company:
Part Number:
NTZD3154NT5G
Manufacturer:
ONSemi
Quantity:
12 233
Company:
Part Number:
NTZD3154NT5G
Manufacturer:
ONSemi
Quantity:
12 233
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.8
1.6
1.4
1.2
0.8
0.6
0
2
1
−50
0
1
1
−25
Figure 5. On−Resistance Variation with
V
5.5 V
Figure 1. On−Region Characteristics
GS
V
1.8 V
V
DS
GS
Figure 3. On−Resistance versus
T
2
= 2.0 V to 2.2 V
2
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
Gate−to−Source Voltage
3
TYPICAL PERFORMANCE CURVES
25
Temperature
4
3
V
V
V
V
GS
GS
GS
GS
50
5
= 1.6 V
= 1.4 V
= 1.2 V
= 1.0 V
4
6
75
7
I
T
I
V
100
D
D
J
GS
T
= 0.54 A
= 0.54 A
= 25°C
J
5
= 4.5 V
8
= 25°C
http://onsemi.com
125
9
150
10
6
3
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
(T
10
0
0.5
0.2
J
2
= 25°C unless otherwise noted)
Figure 4. On−Resistance versus Drain Current
V
T
V
Figure 6. Drain−to−Source Leakage Current
J
DS
GS
= 25°C
4
w 10 V
= 0 V
V
V
Figure 2. Transfer Characteristics
DS
1.0
GS
0.4
, DRAIN−TO−SOURCE VOLTAGE (V)
6
, GATE−TO−SOURCE VOLTAGE (V)
V
GS
I
T
D
T
8
V
J
, DRAIN CURRENT (A)
V
= 1.8 V
J
and Gate Voltage
GS
versus Voltage
= 100°C
GS
1.5
0.6
T
= −55°C
J
= 2.5 V
T
= 4.5 V
= 150°C
10
J
= 25°C
12
0.8
2.0
14
T
J
= 100°C
16
2.5
1
18
3.0
1.2
20