NTZD3154N ON Semiconductor, NTZD3154N Datasheet - Page 4
NTZD3154N
Manufacturer Part Number
NTZD3154N
Description
Small Signal Mosfet 20 V, 540 Ma, Dual Nchannel
Manufacturer
ON Semiconductor
Datasheet
1.NTZD3154N.pdf
(5 pages)
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Quantity
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Company:
Part Number:
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Manufacturer:
ONSemi
Quantity:
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ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
NTZD3154NT1G
NTZD3154NT5G
Specifications Brochure, BRD8011/D.
200
150
100
100
50
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
1
5
1
V
V
I
V
Figure 9. Resistive Switching Time Variation
D
DS
C
DS
GS
= 0.2 A
RSS
V
= 0 V
Device
GS
= 10 V
= 4.5 V
Figure 7. Capacitance Variation
0
V
GS
R
versus Gate Resistance
V
G
DS
= 0 V
, GATE RESISTANCE (W)
t
TYPICAL PERFORMANCE CURVES
r
5
t
d(OFF
t
f
)
10
10
C
t
d(ON)
OSS
(Pb−Free)
(Pb−Free)
SOT−563
SOT−563
Package
T
15
J
C
= 25°C
ISS
http://onsemi.com
20
100
4
5
4
3
2
1
0
0
0.6
0.5
0.4
0.3
0.2
0.1
(T
Q
0
Drain−to−Source Voltage versus Total Charge
0.2
V
GS
J
DS
= 25°C unless otherwise noted)
0.2
V
T
Figure 10. Diode Forward Voltage versus
J
GS
0.3
= 25°C
Q
Figure 8. Gate−to−Source and
V
= 0 V
Q
GD
0.4
SD
g
, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
0.4
0.6
Q
4000 / Tape & Reel
8000 / Tape & Reel
0.5
T
0.8
Current
Shipping
0.6
1
0.7
I
T
D
1.2
J
= 0.54 A
= 25°C
0.8
1.4
V
GS
0.9
1.6
20
16
12
8
4
0
1