AO6401 Alpha & Omega Semiconductor, AO6401 Datasheet

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AO6401

Manufacturer Part Number
AO6401
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO6401/L uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.AO6401 and AO6401L are electrically
identical.
-RoHS Compliant
-AO6401L is Halogen Free
AO6401
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
D
D
G
B
T
T
T
T
Top View
A
A
A
A
=25°C
=70°C
=25°C
=70°C
TSOP6
, low gate charge and
1
2
3
C
6
5
4
A
A
A
=25°C unless otherwise noted
D
D
S
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
G
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= -5 A (V
(V) = -30V
< 49mΩ (V
< 64mΩ (V
< 119mΩ (V
D
S
Maximum
-55 to 150
GS
1.44
47.5
±12
-4.2
Typ
-30
-30
74
37
-5
2
= -10V)
Rg,Ciss,Coss,Crss Tested
GS
GS
GS
= -10V)
= -4.5V)
= -2.5V)
Max
62.5
110
50
www.aosmd.com
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO6401 Summary of contents

Page 1

... AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.AO6401 and AO6401L are electrically identical ...

Page 2

... AO6401 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO6401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V -4. (Volts) DS Fig 1: On-Region Characteristics 120 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 130 110 25° (Volts) GS Figure 5: On-Resistance vs ...

Page 4

... AO6401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

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