AO4607 Alpha & Omega Semiconductor, AO4607 Datasheet

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AO4607

Manufacturer Part Number
AO4607
Description
Complementary Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4607
Manufacturer:
AO
Quantity:
20 000
Part Number:
AO4607L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
Current
Pulsed Diode Forward Current
Power Dissipation
Junction and Storage Temperature Range
AO4607
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
R
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n-
channel FET to minimize body diode
losses. AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
DS(ON)
S2/A
G2
S1
G1
A
A
and low gate charge. The
SOIC-8
1
2
3
4
8
7
6
5
A
B
D2/K
D2/K
D1
D1
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
=25°C
=70°C
=25°C
=70°C
=25°C
=70°C
=25°C
=70°C
B
A
=25°C unless otherwise noted
Symbol
V
V
I
I
P
T
Symbol
V
I
I
P
T
D
DM
D
DM
J
J
DS
GS
D
DS
D
, T
, T
Features
n-channel
V
I
R
< 28mΩ (V
< 42mΩ (V
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D
DS
DS(ON)
= 6.9A (V
STG
STG
(V) = 30V
G
n-channel
GS
GS
GS
D
S2
Max n-channel
=10V)
=4.5V)
=10V)
-55 to 150
Maximum Schottky
K
A
1.28
±20
6.9
5.8
30
30
2
-55 to 150
R
1.28
-30V
30
20
p-channel
-6A (V
DS(ON)
3
2
2
< 35mΩ (V
< 58mΩ (V
p-channel
G
GS
D
S
Max p-channel
=1-0V)
-55 to 150
GS
GS
1.28
±20
= -10V)
=- 4.5V)
-30
-30
-6
-5
2
Units
°C
W
V
A
Units
°C
W
V
V
A

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AO4607 Summary of contents

Page 1

... The DS(ON) complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n- channel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical. S2/A D2/K 1 ...

Page 2

... AO4607 Thermal Characteristics: n-channel, Schottky and p-channel Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Alpha Omega Semiconductor, Ltd. Symbol Device t ≤ ...

Page 3

... AO4607 N-Channel + Schottky Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current. I DSS (Set by Schottky leakage) I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Body-Diode+Schottky Forward Voltage ...

Page 4

... AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 4. (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 5

... AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 V =15V DS I =6. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 1ms 10 10ms 0.1s 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θ ...

Page 6

... AO4607 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 7

... AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -4.5V -10V - (Volts) DS Fig 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 125° 25° ...

Page 8

... AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

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