AO4613 Alpha & Omega Semiconductor, AO4613 Datasheet
AO4613
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AO4613 Summary of contents
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... The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications ESD protected. Standard product AO4613 is Pb-free (meets ROHS & Sony 259 specifications). AO4613L is a Green Product ordering option. AO4613 and AO4613L are electrically identical ...
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... AO4613 N-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
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... AO4613 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 5V 10V (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...
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... AO4613 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =7. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 1ms 10 10ms 0.1s 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θJA 1 0.1 0.01 0.00001 ...
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... AO4613 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
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... AO4613 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V - (Volts) DS Fig 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 (Volts) GS Figure 5: On-Resistance vs ...
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... AO4613 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-6. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...