AO4613 Alpha & Omega Semiconductor, AO4613 Datasheet

no-image

AO4613

Manufacturer Part Number
AO4613
Description
Complementary Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4613
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO4613L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO4613L/
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Avalanche Current
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4613
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4613 uses advanced trench
technology MOSFETs to provide
excellent R
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4613 is Pb-free
(meets ROHS & Sony 259
specifications). AO4613L is a Green
Product ordering option. AO4613 and
AO4613L are electrically identical
S2
G2
S1
G1
A
SOIC-8
DS(ON)
1
2
3
4
8
7
6
5
and low gate charge.
B
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
C
A
A
A
A
A
=25°C unless otherwise noted
B
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
I
E
T
D
DM
AR
J
DS
GS
D
AR
Features
n-channel
V
I
R
< 24mΩ (V
< 40mΩ (V
ESD rating: 1500V (HBM)
, T
D
DS
DS(ON)
= 7.2A (V
STG
(V) = 30V
Symbol
GS
GS
GS
Max n-channel
R
R
R
R
=10V)
=4.5V)
=10V)
θJA
θJA
θJL
θJL
G2
-55 to 150
n-channel
1.44
±20
7.2
6.1
30
30
15
11
2
R
DS(ON)
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
-30V
p-channel
-6.1A (V
< 37m Ω (V
< 60m Ω (V
D2
S2
Max p-channel
G1
GS
=10V)
-55 to 150
55
92
37
48
84
37
GS
GS
p-channel
1.44
Max
±20
-6.1
-5.1
-30
-30
= -10V)
= -4.5V)
20
20
2
62.5 °C/W
62.5 °C/W
110
110
50
50
D1
S1
Units
Units
°C/W
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
A

Related parts for AO4613

AO4613 Summary of contents

Page 1

... The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications ESD protected. Standard product AO4613 is Pb-free (meets ROHS & Sony 259 specifications). AO4613L is a Green Product ordering option. AO4613 and AO4613L are electrically identical ...

Page 2

... AO4613 N-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 3

... AO4613 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 5V 10V (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO4613 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =7. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 1ms 10 10ms 0.1s 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θJA 1 0.1 0.01 0.00001 ...

Page 5

... AO4613 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...

Page 6

... AO4613 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V - (Volts) DS Fig 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 (Volts) GS Figure 5: On-Resistance vs ...

Page 7

... AO4613 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-6. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

Related keywords