AO4614B Alpha & Omega Semiconductor, AO4614B Datasheet
AO4614B
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AO4614B Summary of contents
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... AO4614B Complementary Enhancement Mode Field Effect Transistor General Description The AO4614B/L uses advanced trench technology MOSFETs to provide excellent R charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AO4614B and AO4614BL are electrically identical. -RoHS Compliant -AO4614BL is Halogen Free ...
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... AO4614B N Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
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... AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 10V 4. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs ...
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... AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 V =20V (nC) g Figure 7: Gate-Charge Characteristics 100 DS(ON) limited 0.1 T =150°C J(Max) T =25°C A 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...
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... AO4614B P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
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... AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 -5V -4. (Volts) DS Fig 12: On-Region Characteristics =-4. =-10V (A) D Figure 14: On-Resistance vs. Drain Current and Gate Voltage 130 110 25° (Volts) GS Figure 16: On-Resistance vs ...
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... AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-20V - (nC) g Figure 18: Gate-Charge Characteristics 100 DS(ON) limited 0.1 T =150°C J(Max) T =25°C A 0.01 0 (Volts) DS Figure 20: Maximum Forward Biased Safe Operating Area (Note ...