AO4812 Alpha & Omega Semiconductor, AO4812 Datasheet
AO4812
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AO4812 Summary of contents
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... AO4812 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4812/L uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.AO4812 and AO4812L are electrically identical ...
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... AO4812 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 4. (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...
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... AO4812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =6. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 1ms 10 10ms 0.1s 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θJA 1 0.1 0.01 0.00001 ...