NTHD4N02F ON Semiconductor, NTHD4N02F Datasheet

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NTHD4N02F

Manufacturer Part Number
NTHD4N02F
Description
Power Mosfet And Schottky Diode
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
NTHD4N02FT1
Manufacturer:
ON Semiconductor
Quantity:
455
Part Number:
NTHD4N02FT1
Manufacturer:
ON
Quantity:
36 000
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Part Number:
NTHD4N02FT1G
Quantity:
150
NTHD4N02F
Power MOSFET and
Schottky Diode
20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFETt
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 8
MOSFET MAXIMUM RATINGS
SCHOTTKY DIODE MAXIMUM RATINGS
(T
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Forward Current
Converters
and Media Players
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP−6 Package with Better Thermals
Super Low Gate Charge MOSFET
Ultra Low V
Pb−Free Package is Available
Fast Switching, low Gate Charge for DC−to−DC Buck and Boost
Li−Ion Battery Applications in Cell Phones, PDAs, DSCs,
Load Side Switching
J
= 25°C unless otherwise noted)
Parameter
Parameter
F
Schottky
t v 5 s
t v 5 s
t v 5 s
Steady
Steady
Steady
State
State
State
t
p
=10 ms
T
T
T
T
T
T
T
J
J
J
J
J
J
J
(T
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
J
= 25°C unless otherwise noted)
T
Symbol
Symbol
J
V
V
V
, T
I
P
V
T
RRM
DSS
DM
I
I
I
GS
D
S
F
D
R
L
STG
−55 to 150
Value
Value
0.91
0.36
±12
260
2.9
2.1
3.9
2.1
2.6
2.2
3.7
20
12
20
20
1
Unit
Unit
°C
°C
W
V
V
A
A
A
V
V
A
A
†For information on tape and reel specifications,
NTHD4N02FT1
NTHD4N02FT1G
G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
V
1
PIN CONNECTIONS
N−Channel MOSFET
(BR)DSS
A
A
S
G
R
20 V
20 V
Device
MAX
1
2
3
4
ORDERING INFORMATION
C2 = Specific Device Code
M
G
D
SCHOTTKY DIODE
1
http://onsemi.com
= Month Code
= Pb−Free Package
60 mW @ 4.5 V
80 mW @ 2.5 V
S
8
7
6
5
R
(Pb−Free)
MOSFET
Package
ChipFET
ChipFET
1
DS(on)
V
0.35 V
C
C
D
D
F
Publication Order Number:
TYP
TYP
1
2
3
4
CASE 1206A
SCHOTTKY DIODE
ChipFET]
STYLE 3
3000/Tape & Reel
3000/Tape & Reel
MARKING
DIAGRAM
NTHD4N02F/D
Shipping
C
A
I
D
I
3.9 A
F
3.7 A
MAX
MAX

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NTHD4N02F Summary of contents

Page 1

... CASE 1206A STYLE 3 MARKING DIAGRAM Specific Device Code M = Month Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping ChipFET 3000/Tape & Reel ChipFET 3000/Tape & Reel (Pb−Free) Publication Order Number: NTHD4N02F/D † ...

Page 2

... SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Non−Repetitive Peak Surge Current 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. NTHD4N02F (T = 25°C unless otherwise noted) J Symbol Test Conditions = 250 mA ...

Page 3

... GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.5 1.3 1.1 0.9 0.7 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTHD4N02F (T = 25°C unless otherwise noted 25° 25° ...

Page 4

... Figure 7. Capacitance Variation 100 2 4 d(off) t d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance NTHD4N02F (T = 25°C unless otherwise noted 25°C J 4.5 4 3 OSS 0 0 Figure 8. Gate− ...

Page 5

... Ipk/ 1.5 Ipk/ Ipk/ Ipk/ 0 105 T , LEAD TEMPERATURE (°C) L Figure 15. Current Derating NTHD4N02F (T = 25°C unless otherwise noted 150° 0.1 0.60 0.80 0.00 0. MAXIMUM INSTANTANEOUS FORWARD F Figure 12. Maximum Forward Voltage 100E−3 10E−3 1E−3 100E−6 10E− ...

Page 6

... NOM 2.032 0.08 0.711 1.092 0.028 0.043 0.254 0.010 0.66 mm 0.026 SCALE 20:1 inches Style 3 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTHD4N02F/D MAX 0.043 0.014 0.008 0.122 0.067 0.017 0.079 0.178 0.007 ...

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