CPH5612 Sanyo Semiconductor Corporation, CPH5612 Datasheet

CPH5612

Manufacturer Part Number

CPH5612

Description

Ultrahigh-speed Switching N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.CPH5612.pdf (4 pages)

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Ordering number : ENN8180

CPH5612

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FS

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

Composite type with 2 MOSFETs contained in a single package, facilitaing-density mounting.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V GS (off)

Symbol

V GSS

V DSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

I D

t r

t f

PW 10 s, duty cycle 1%

Mounted on a ceramic board (600mm

I D =1mA, V GS =0

V DS =100V, V GS =0

V GS = 8V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =500mA

I D =500mA, V GS =4V

I D =500mA, V GS =2.5V

V DS =20V, f=1MHz

See specified Test Circuit.

CPH5612

Conditions

0.8mm) 1unit

11205PE TS IM TB-00001087

min

100

0.4

1.8

Ratings

typ

Ratings

430

450

350

2.6

Continued on next page.

--55 to +150

max

100

150

0.9

570

650

1.3

No.8180-1/4

Unit

Related parts for CPH5612

CPH5612 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN CPH5612 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Drain-to-Source Voltage CPH5612 Symbol Conditions =50V =4V =1A Qgs V DS =50V =4V =1A Qgd V DS =50V =4V = =1A 0. =0. =100 V OUT CPH5612 S 3.0 2.5 2.0 1.5 1.0 0 =1.0V 0.7 0.8 0.9 1.0 IT08335 Ratings min typ max 4.4 1.2 0.8 0.82 Electrical Connection ...

Page 3

... Drain Current =50V Total Gate Charge CPH5612 1200 Ta= =500mA 1000 800 600 400 200 --60 --40 IT08337 =10V 1 0 ...

Page 4

... Ambient Temperature Note on usage : Since the CPH5612 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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