NDT410EL Fairchild Semiconductor, NDT410EL Datasheet

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NDT410EL

Manufacturer Part Number
NDT410EL
Description
N-channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
* Order option J23Z for cropped center drain lead.
ABSOLUTE MAXIMUM RATINGS
© 1997 Fairchild Semiconductor Corporation
___________________________________________________________________________________________
D
J
DSS
GSS
D
General Description
,T
NDT410EL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Power SOT N-Channel logic level enhancement mode
power field effect transistors are produced using
Fairchild's
technology. This very high density process is especially
tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulses
in the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
proprietary,
- Pulsed
high
cell
T
A
= 25°C unless otherwise noted
density,
G
D
D
DMOS
(Note 1a)
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
S
Features
2.1A 100V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
DS(ON)
NDT410EL
-65 to 150
= 0.25
100
2.1
1.3
1.1
20
10
42
12
3
@ V
GS
= 5V.
G
DS(ON)
D
August 1996
.
NDT410EL Rev. B1
Units
°C/W
°C/W
S
W
°C
V
V
A

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NDT410EL Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) August 1996 = 0. 5V. DS(ON DS(ON NDT410EL 100 20 2 1.3 1.1 -65 to 150 42 12 NDT410EL Rev Units °C °C/W °C/W ...

Page 2

... Min Typ Max 15 10 100 55°C J 100 -100 1 1.5 0.65 1.1 1 125°C J 0.2 0.25 0.37 0 125° 528 120 1.5 5.6 Units µA µ NDT410EL Rev. B1 ...

Page 3

... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. = 25°C unless otherwise noted) A Conditions 2.3 A (Note 2 /dt = 100A/µ Min Typ Max Units 2.3 A 1.3 V 150 ns is guaranteed NDT410EL Rev. B1 ...

Page 4

... GS 3.5 4.0 5 DRAIN CURRENT (A) D Gate Voltage and Drain Current 125°C J 25°C -55° DRAIN CURRENT ( 250 100 125 T , JUNCTION TEMPERATURE (°C) J NDT410EL Rev 150 175 ...

Page 5

... J 25°C -55°C 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Current and Temperature 20V = 2.1A DS 50V GATE CHARGE (nC off t t d(off PULSE WIDTH NDT410EL Rev. B1 1.2 80V INVERTED ...

Page 6

... COPPER MOUNTING PAD AREA ( SINGLE PULSE T = 25° 100 V , DRAIN-SOURCE VOLTAGE (V) DS Operating Area. R ( See Note P(pk ( Duty Cycle NDT410EL Rev 200 ...

Page 7

SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label SOT-223 Packaging Information Standard D84Z Packaging Option (no flow code) Packaging type TNR TNR 2,500 500 Qty per Reel/Tube/Bag Reel Size 13" Dia 7" Dia ...

Page 8

SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3 Pkg type SOT-223 6.83 7.42 12.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (12mm) Notes: A0, B0, and ...

Page 9

SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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