SIR158DP Vishay, SIR158DP Datasheet

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SIR158DP

Manufacturer Part Number
SIR158DP
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SIR158DP-T1-GE3
Manufacturer:
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Quantity:
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SIR158DP-T1-GE3
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Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Package Limited.
Document Number: 64730
S09-0318-Rev. A, 02-Mar-09
Ordering Information: SiR158DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
30
(V)
C
8
6.15 mm
D
= 25 °C.
0.0023 at V
0.0018 at V
7
D
R
6
DS(on)
D
PowerPAK
5
GS
Bottom View
GS
D
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
b, f
1
®
S
N-Channel 30-V (D-S) MOSFET
SO-8
2
S
I
D
3
S
(A)
60
60
5.15 mm
g
g
4
a, g
d, e
G
A
= 25 °C, unless otherwise noted
Q
41.5 nC
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Low-Side Switch for DC/DC Converters
• OR-ing
Symbol
Symbol
T
R
R
Definition
100 % UIS Tested
- Servers
- POL
- VRM
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
Tested
®
Gen III Power MOSFET
Typical
1.0
18
G
N-Channel MOSFET
- 55 to 150
4.9
5.4
3.4
Limit
40
32
± 20
125
260
60
60
60
30
80
50
83
53
b, c
b, c
b, c
b, c
b, c
g
g
g
D
S
Maximum
1.5
23
Vishay Siliconix
SiR158DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SIR158DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR158DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR158DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 64730 S09-0318-Rev. A, 02-Mar-09 New Product 1.5 2.0 2 SiR158DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS ...

Page 4

... SiR158DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.015 0.012 °C J 0.009 0.006 0.003 0.000 0.8 1.0 1.2 200 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR158DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR158DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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