MTD20N06HDL ON Semiconductor, MTD20N06HDL Datasheet

MTD20N06HDL

Manufacturer Part Number

MTD20N06HDL

Description

Power Mosfet 20 Amps, 60 Volts, Logic Level

Manufacturer

ON Semiconductor

Datasheet

1.MTD20N06HDL.pdf (8 pages)

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Part Number:

MTD20N06HDLT4

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MTD20N06HDL

Power MOSFET

20 Amps, 60 Volts, Logic Level

N−Channel DPAK

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain−to−source diode with a fast

recovery time. Designed for low−voltage, high−speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits, and

inductive loads. The avalanche energy capability is specified to

eliminate the guesswork in designs where inductive loads are

switched, and to offer additional safety margin against unexpected

voltage transients.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR−4 board using the minimum recommended

2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.

August, 2006 − Rev. 6

MAXIMUM RATINGS

Drain−Source Voltage

Drain−Gate Voltage (R

Gate−Source Voltage

− Continuous

− Non−Repetitive (t

Drain Current − Continuous @ 25°C

Drain Current

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

This advanced Power MOSFET is designed to withstand high

Fast Recovery Diode

Avalanche Energy Specified

Source−to−Drain Diode Recovery Time Comparable to a Discrete

Diode is Characterized for Use in Bridge Circuits

Pb−Free Package is Available

pad size.

= 20 Apk, L = 1.0 mH, R

DSS

= 25 Vdc, V

and V

DS(on)

− Continuous @ 100°C

− Single Pulse (t

Rating

= 5.0 Vdc,

≤ 10 ms)

= 25°C

Specified at Elevated Temperature

= 1.0 MW)

= 25 W)

= 25°C unless otherwise noted)

Preferred Device

= 25°C (Note 1)

≤ 10 ms)

Symbol

GSM

DGR

, T

DSS

stg

−55 to

Value

± 15

± 20

0.32

1.75

3.13

71.4

150

200

100

260

W/°C

°C/W

Unit

Vdc

Vpk

Adc

Apk

°C

1 2

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAM & PIN ASSIGNMENTS

MTD20N06HDL

MTD20N06HDLT4

MTD20N06HDLT4G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

20 AMPERES, 60 VOLTS

Device

CASE 369C

20N06HL = Device Code

ORDERING INFORMATION

STYLE 2

DPAK

http://onsemi.com

DS(on)

N−Channel

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

Drain 2

DPAK

Source 3

= 45 mW

Publication Order Number:

Gate 1

MTD20N06HDL/D

2500 Tape & Reel

YWW

06HLG

75 Units/Rail

Shipping

20N

Drain

†

Related parts for MTD20N06HDL

MTD20N06HDL Summary of contents

Page 1

... Drain 2 20N Drain 06HLG DPAK Source 3 CASE 369C STYLE Year WW = Work Week 20N06HL = Device Code G = Pb−Free Package ORDERING INFORMATION † Package Shipping DPAK 75 Units/Rail DPAK 2500 Tape & Reel DPAK 2500 Tape & Reel (Pb−Free) Publication Order Number: MTD20N06HDL/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° 4 0.2 0.4 0.6 0.8 1.0 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 I S Figure 15. Diode Reverse Recovery Waveform P (pk DUTY CYCLE 0.001 0.01 0.1 ...

Page 8

... V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 6.172 0.243 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTD20N06HDL/D ...

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