FQB6N60 Fairchild Semiconductor, FQB6N60 Datasheet

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FQB6N60

Manufacturer Part Number
FQB6N60
Description
Fqb6n60/fqi6n60 600v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
FQB6N60 / FQI6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings 
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
 T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 6.2A, 600V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI Series
I
2
-PAK
FQB6N60 / FQI6N60
DS(on)
Typ
--
--
--
-55 to +150
= 1.5
24.8
3.13
1.04
600
440
130
300
6.2
3.9
6.2
4.5
13
30
G
@V
!
!
Max
0.96
62.5
GS
40
QFET
QFET
QFET
QFET
= 10 V
! "
! "
!
!
!
!
S
D
"
"
"
"
"
"
April 2000
Units
W/°C
Units
°CW
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
W
V
A
A
A
V
A
TM

Related parts for FQB6N60

FQB6N60 Summary of contents

Page 1

... A = 25°C) C Parameter April 2000 QFET QFET QFET QFET = 1 DS(on " " ! " ! " " " " " FQB6N60 / FQI6N60 Units 600 V 6.2 A 3.9 A 24.8 A 30 V 440 mJ 6 4.5 V/ns 3.13 W 130 W 1.04 W/°C -55 to +150 °C 300 °C Typ Max ...

Page 2

... V = 50V 6.2A, di/dt  200A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Drain Current and Gate Voltage 1400 1200 C iss 1000 C 800 oss 600 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International Notes : 1. 250  s Pulse Test = 10V GS = 20V 0 10 ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  0.5 D 0.0 100 150 200 -100 o C] ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT R ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 D PAK 0.20 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A, April 2000 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A, April 2000 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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