RHU002N06 ROHM Co. Ltd., RHU002N06 Datasheet

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RHU002N06

Manufacturer Part Number
RHU002N06
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Nch MOS FET
RHU002N06
Silicon N-channel MOS FET transistor
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
Channel to ambient
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Type
RHU002N06
With each pin mounted on the recommended land.
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Symbol
Rth (ch-a)
Symbol
V
V
Tstg
Tch
I
P
GSS
I
DSS
DP
I
I
D
S
SP
D
∗1
∗1
∗2
Taping
T106
3000
−55 to + 150
Limits
±200
±800
±20
200
800
200
150
Limits
60
625
(1) Source
(2) Gate
(3) Drain
External dimensions (Unit : mm)
Unit
mW
UMT3
mA
mA
mA
mA
˚C
˚C
V
V
°C / W
Unit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
Equivalent circuit
Abbreviated symbol : KP
0.65
( 3 )
( 2 )
2.0
1.3
0.65
0.3
( 1 )
(2)
Each lead has same dimensions
0.2
0.15
∗1
0.9
0.7
RHU002N06
Rev.B
(3)
(1)
(1)
(2)
(3)
∗2
Source
Gate
Drain
1/4

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RHU002N06 Summary of contents

Page 1

... S ∗1 I 800 mA SP ∗2 P 200 mW D Tch 150 ˚C − 150 Tstg ˚C Symbol Unit Limits ∗ ° 625 RHU002N06 2.0 0.9 0.2 0.7 0 0.65 0.65 0.15 1.3 Each lead has same dimensions Abbreviated symbol : KP Equivalent circuit (3) ∗2 (2) ∗1 (1) Source ∗1 ESD PROTECTION DIODE (2) (1) Gate ∗ ...

Page 2

... Min. Typ. Max. Unit ∗ − − 1 =200mA RHU002N06 Test Conditions V =±20V =1mA =60V =10V, I =1mA =200mA, V =10V =200mA, V =4V ...

Page 3

... Resistance vs. Drain Current ( ΙΙ Pulsed 0.1 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 SOURCE-DRAIN VOLTAGE : V Fig.8 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) RHU002N06 2.5 2.0 1.5 1.0 0.5 0.0 −50 − 100 125 4.5 CHANNEL TEMPERATURE : Tch Fig.3 Gate Threshold Voltage vs. Channel Temperature ...

Page 4

... DRAIN-SOURCE VOLTAGE : V DS Fig.11 Typical Capacitance vs. Drain-Source Voltage Pulse width 50 10 (on Fig.14 Switching time waveforms RHU002N06 1000 = 100 iss t d(off) C oss 10 t d(on) C rss 100 1 10 100 (V) (mA) DRAIN CURRENT : I D Fig.12 Switching Characteristics ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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