RHP030N03 ROHM Co. Ltd., RHP030N03 Datasheet - Page 3

• Manufacturer Part Number: RHP030N03
• Description: 4v Drive Nch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
Electrical characteristics curves
1000
100
10
1
0.01
0.5
0.4
0.3
0.2
0.1
0.01
0
0.1
DRAIN-SOURCE VOLTAGE : V
0
1
0.01
Fig.4 Static Drain-Source
Fig.1 Typical Capacitance
GATE-SOURCE VOLTAGE : V
1.5A
2
Fig.7 Static Drain-Source
0.1
On-State Resistance vs.
Gate-Source Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : I
vs. Drain-Source Voltage
4
On-State Resistance
vs. Drain Current (
0.1
I
D
6
=3.0A
1
8
10
10
1
Ta=25°C
Pulsed
D
DS
Ta=25°C
f=1MHz
V
V
Pulsed
GS
(A)
12
GS
GS
(V)
Crss
Ciss
Coss
=0V
=10V
(V)
Ι
100
)
14
10
1000
100
10
0.001
1
0.01
0.01
0.1
10
0.01
1
0.1
0
Fig.2 Switching Characteristics
1
0.01
Fig.5 Reverse Drain Current vs.
SOURCE-DRAIN VOLTAGE : V
Ta= −25°C
Ta=125°C
0.2
Ta=75°C
Ta=25°C
Fig.8 Static Drain-Source
DRAIN CURRENT : I
Ta= −25°C
Source-Drain Voltage ( Ι )
Ta=125°C
DRAIN CURRENT : I
0.4
Ta=75°C
Ta=25°C
0.1
On-State Resistance
vs. Drain Current (
0.1
0.6
0.8
1
D
1
1
(A)
Ta=25°C
V
V
R
Pulsed
D
DD
GS
G
V
Pulsed
=10Ω
(A)
1.2
= 15V
= 10V
tf
td (off)
td (on)
GS
tr
SD
V
Pulsed
GS
=0V
(V)
ΙΙ
=4V
10
1.4
)
10
0.01
0.1
10
0.001
Fig.3 Typical Transfer Characteristics
1
0.01
0.1
10
0
1
V
Pulsed
0
DS
2.5
1.5
0.5
GATE-SOURCE VOLTAGE : V
Fig.6 Reverse Drain Current vs.
Fig.9 Gate Threshold Voltage vs.
SOURCE-DRAIN VOLTAGE : V
2
1
0
=10V
0.5
V
-50
GS
0.2
CHANNEL TEMPERATURE : Tch (°C)
=10V
-25
Source-Drain Voltage ( ΙΙ )
Channel Temperature
1
Ta=125°C
0.4
0
−25°C
1.5
RHP030N03
75°C
25°C
Rev.A
25
0.6
2
50
0V
0.8
2.5
75
Ta=25°C
Pulsed
GS
100
1
SD
3
(V)
V
I
Pulsed
D
SD
(V)
=1mA
125 150
=10V
1.2
3.5
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