STN4900 Stanson Technology Co., Ltd., STN4900 Datasheet

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STN4900

Manufacturer Part Number
STN4900
Description
Dual N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

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STN4900
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DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
The STN4900 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer
Li-ion Battery
switching .
PIN
PIN
PIN
PIN CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
CONFIGURATION
CONFIGURATION
CONFIGURATION
MARKING
MARKING
MARKING
, power management and other battery powered circuits where high-side
Dual N Channel Enhancement Mode MOSFET
1
FEATURE
FEATURE
FEATURE
FEATURE
maximum DC current capability
60V/5.3A, R
60V/4.7A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and
SOP-8 package design
ST
ST
ST
STN4900
@VGS = 10V
@VGS = 4.5V
DS(ON)
DS(ON)
Copyright © 2007, Stanson Corp.
N4900
N4900
N4900
DS(ON)
= 118mΩ (Typ.)
=125mΩ
STN4900 2009. V1
5.3A

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STN4900 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION The STN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer ...

Page 2

... =25℃ =70 ℃ STG R θ N4900 N4900 ST STN4900 N4900 5.3A Unit Unit Typical Unit Unit 60 V ± 4 2.5 W 1.6 ℃ -55/150 ℃ -55/150 ℃ Copyright © 2007, Stanson Corp. STN4900 2009. V1 ...

Page 3

... Typ Typ Max Max Unit Unit Min Min Typ Typ Max Max Unit Unit 60 V 0.5 1.5 V ±100 0.110 0.118 Ω 0.115 0.125 15 S 0.8 1 2.5 nC 2.6 675 Copyright © 2007, Stanson Corp. STN4900 2009. V1 ...

Page 4

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS (25℃ Unless Note) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST N4900 N4900 STN4900 ST N4900 Dual N Channel Enhancement Mode MOSFET 4 Copyright © 2007, Stanson Corp. 5.3A STN4900 2009. V1 ...

Page 5

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS (25℃ Unless Note) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST N4900 N4900 STN4900 ST N4900 Dual N Channel Enhancement Mode MOSFET 5 Copyright © 2007, Stanson Corp. 5.3A STN4900 2009. V1 ...

Page 6

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS (25℃ Unless Note) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST N4900 N4900 STN4900 ST N4900 Dual N Channel Enhancement Mode MOSFET 6 Copyright © 2007, Stanson Corp. 5.3A STN4900 2009. V1 ...

Page 7

... SOP-8 SOP-8 PACKAGE PACKAGE OUTLINE OUTLINE SOP-8 PACKAGE SOP-8 PACKAGE OUTLINE OUTLINE 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST N4900 N4900 STN4900 ST N4900 Dual N Channel Enhancement Mode MOSFET 7 Copyright © 2007, Stanson Corp. 5.3A STN4900 2009. V1 ...

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