NTD20N06 ON Semiconductor, NTD20N06 Datasheet - Page 3

• Manufacturer Part Number: NTD20N06
• Description: Power Mosfet
• Manufacturer: ON Semiconductor

0.065
0.055
0.045
0.035
0.025
0.015
40
32
24
16
1.6
1.8
1.4
1.2
0.8
0.6
8
0
2
1
−50
0
0
8 V
V
V
GS
9 V
V
GS
−25
I
V
DS
D
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
= 10 V
= 10 V
= 10 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
Figure 3. On−Resistance versus
1
T
8
J
0
, JUNCTION TEMPERATURE ( C)
I
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
25
2
Temperature
16
T
T
T
50
J
J
J
7 V
= 100 C
= 25 C
= −55 C
75
3
24
100
125
4
32
6.5 V
4.5 V
5.5 V
6 V
5 V
http://onsemi.com
150
NTD20N06
175
5
40
3
10000
0.065
0.055
0.045
0.035
0.025
0.015
1000
100
10
40
32
24
16
1
8
0
2.6
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
V
V
DS
GS
V
V
GS
T
DS
GS
J
3.4
= 15 V
10
= 100 C
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10 V
8
T
I
J
D
= 25 C
, DRAIN CURRENT (AMPS)
20
4.2
and Gate Voltage
versus Voltage
16
T
T
T
T
T
T
J
J
J
J
J
J
= 150 C
= 125 C
= 100 C
= 100 C
= −55 C
= 25 C
30
T
5
J
= −55 C
24
5.8
40
32
6.6
50
7.4
40
60