HMP351U6MMP8C Hynix Semiconductor, HMP351U6MMP8C Datasheet

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HMP351U6MMP8C

Manufacturer Part Number
HMP351U6MMP8C
Description
240pin Ddr2 Sdram Unbuffered Dimms Based On 2gb M Version
Manufacturer
Hynix Semiconductor
Datasheet
This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 2Gb M version DDR2
SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb ver-
sion M based DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm
width form factor of industry standard. It is suitable for easy interchange and addition.
FEATURES
ORDERING INFORMATION
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1 / May 2008
240pin DDR2 SDRAM Unbuffered DIMMs based on 2Gb M version
HMP351U6MMP8C - Y5/S6
HMP351U7MMP8C - Y5/S6
JEDEC standard Double Data Rate2
Synchrnous DRAMs (DDR2 SDRAMs) with
1.8V +/- 0.1V Power Supply
All inputs and outputs are compatible with
SSTL_1.8 interface
8 Bank architecture
Posted CAS
Programmable CAS Latency 3 ,4 ,5, 6
OCD (Off-Chip Driver Impedance Adjustment)
ODT (On-Die Termination)
Part Name
Density
4GB
4GB
512Mx64
512Mx72
Org.
Fully differential clock operations (CK & CK)
Programmable Burst Length 4 / 8 with both
sequential and interleave mode
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
Serial presence detect with EEPROM
DDR2 SDRAM Package:
60ball FBGA(256Mx8)
133.35 x 30.00 mm form factor
RoHS compliant
DRAMs
# of
16
18
ranks
# of
2
2
Materials
Lead-free
Lead-free
None
ECC
ECC
1

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HMP351U6MMP8C Summary of contents

Page 1

... OCD (Off-Chip Driver Impedance Adjustment) • ODT (On-Die Termination) ORDERING INFORMATION Part Name HMP351U6MMP8C - Y5/S6 HMP351U7MMP8C - Y5/S6 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / May 2008 • ...

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SPEED GRADE & KEY PARAMETERS C4 (DDR2-533) Speed @CL3 400 Speed @CL4 533 Speed @CL5 - Speed @CL6 - CL-tRCD-tRP 4-4-4 ADDRESS TABLE Density Organization Ranks 4GB 512M 4GB 512M Rev. 0.1 / May ...

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Input/Output Functional Description Symbol Type Polarity Differential SSTL CK[2:0], CK[2:0] Crossing SSTL Active High CKE[1:0] SSTL Active Low S[1:0] RAS, CAS, SSTL Active Low WE SSTL Active High ODT[1:0] Vref Supply V Supply DDQ SSTL - BA[2:0] A[9:0], A10/AP, SSTL ...

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PIN CONFIGURATION 1 pin 121 pin PIN ASSIGNMENT Pin Name Pin Name 1 VREF 41 VSS 2 VSS 42 NC(CB0)* 3 DQ0 43 NC(CB1)* 4 DQ1 44 VSS 5 VSS 45 NC(DQS8)* 6 DQS0 46 NC(DQS8)* 7 DQS0 47 VSS ...

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PIN ASSIGNMENT(Continued) Pin Name Pin Name 23 VSS DQ16 64 VDD 25 DQ17 65 VSS 26 VSS 66 VSS 27 DQS2 67 VDD 28 DQS2 VSS 69 VDD 30 DQ18 70 A10/AP 31 DQ19 ...

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FUNCTIONAL BLOCK DIAGRAM 4GB(512Mbx64) - HMP351U6MFP8C /S0 / DQS0 DQS0 DM0 DM /CS DQS /DQS / DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 I/ O ...

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FUNCTIONAL BLOCK DIAGRAM 4GB(512Mbx72) - HMP351U72MFP8C /S0 / DQS0 DQS0 DM0 ...

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ABSOLUTE MAXIMUM RATINGS Parameter Voltage on V pin relative to Vss DD Voltage on V pin relative to Vss DDQ Voltage on any pin relative to Vss Operation Conditions and Environmental Parameters Parameter DIMM Operating temperature(ambient) Storage Temperature Storage Humidity(without ...

Page 9

INPUT DC LOGIC LEVEL Parameter Symbol dc Input logic HIGH V (DC Input logic LOW V (DC) IL INPUT AC LOGIC LEVEL Parameter Symbol AC Input logic High V (AC Input logic Low V (AC) IL ...

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Differential Input AC logic Level Symbol Parameter V (ac) ac differential input voltage ID V (ac) ac differential cross point voltage (DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, ...

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OUTPUT BUFFER LEVELS OUTPUT AC TEST CONDITIONS Symbol V Output Timing Measurement Reference Level OTR Note : 1. The VDDQ of the device under test is referenced. OUTPUT DC CURRENT DRIVE Symbol I Output Minimum Source DC Current OH(dc) I ...

Page 12

PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25°C) 4GB : HMP351U6MFP8C Pin CK, CK CKE, ODT, CS Address, RAS, CAS, WE DQ, DM, DQS, DQS 4GB : HMP351U7MFP8C Pin CK, CK CKE, ODT, CS Address, RAS, CAS, WE DQ, DM, DQS, DQS Notes : ...

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U - DIMM : HMP351U6MFP8C Y5 Symbol (DDR2 667@CL 5) 1040 IDD0 1200 IDD1 128 IDD2P 720 IDD2Q 800 IDD2N 560 IDD3P(F) 288 IDD3P(S) 880 IDD3N 1760 IDD4R 1600 IDD4W 2240 IDD5B 128 IDD6 2760 IDD7 ...

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IDD MEASUREMENT CONDITIONS Symbol Operating one bank active-precharge current CK(IDD RC(IDD), t RAS = t RAS- IDD0 min(IDD);CKE is HIGH HIGH between valid commands;Address bus inputs are SWITCHING;Data bus inputs ...

Page 15

Electrical Characteristics & AC Timings Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin Speed DDR2-800(S5) Bin(CL-tRCD-tRP) 5-5-5 Parameter min CAS Latency 5 tRCD 12.5 tRP 12.5 tRC 57.5 tRAS 45 AC Timing Parameters by Speed Grade Parameter Data-Out edge ...

Page 16

Parameter Address and control input setup time Address and control input hold time Read preamble Read postamble Auto-Refresh to Active/Auto-Refresh command period Row Active to Row Active Delay for 1KB page size Row Active to Row Active Delay for 2KB ...

Page 17

Parameter DQ output access time from CK/CK DQS output access time from CK/CK CK high-level width CK low-level width CK half period Clock cycle time, CL=x DQ and DM input setup time (differential strobe) DQ and DM input hold time ...

Page 18

Parameter CAS to CAS command delay Write recovery time Auto precharge write recovery + precharge time tDAL Internal write to read command delay Internal read to precharge command delay Exit self refresh to a non-read command Exit self refresh to ...

Page 19

PACKAGE OUTLINE 512Mx 64 - HMP351U6MFP8C 4.0±0.1 5.175 63.0 Detail-A (2) 2.5 3.0 Detail of Contacts A Detail of Contacts B 2.50 1.0 0.8 ±0.05 Note : All dimensions are in millimeters unless otherwise stated. Rev. 0.1 / May 2008 ...

Page 20

PACKAGE OUTLINE 512Mx 72 - HMP351U7MFP8C 4.0±0.1 5.175 63.0 Detail-A (2) 2.5 3.0 Detail of Contacts A Detail of Contacts B 2.50 1.0 0.8 ±0.05 Note : All dimensions are in millimeters unless otherwise stated. Rev. 0.1 / May 2008 ...

Page 21

REVISION HISTORY Revision 0.1 Rev. 0.1 / May 2008 1240pin DDR2 SDRAM Unbuffered DIMMs History Initial data sheet released Date May. 2008 21 ...

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