CGH09120F Cree, Inc., CGH09120F Datasheet

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CGH09120F

Manufacturer Part Number
CGH09120F
Description
120 W, Uhf - 2.5 Ghz, Gan Hemt For Wcdma, Lte, Mc-gsm
Manufacturer
Cree, Inc.
Datasheet
CGH09120F
120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Cree’s CGH09120F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE
amplifier applications. The transistor is supplied in a ceramic/metal flange
package.
Typical Performance Over 800-950 MHz
Note:
Measured in the CGH09120F-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
Parameter
Gain @ 43 dBm
ACLR @ 43 dBm
Drain Efficiency @ 43 dBm
UHF - 2.5 GHz Operation
21 dB Gain
-38 dBc ACLR at 20 W P
35 % Efficiency at 20 W P
High Degree of DPD Correction Can be Applied
800 MHz
-40.5
19.2
31.0
PRELIMINARY
AVE
Subject to change without notice.
AVE
www.cree.com/wireless
850 MHz
-40.5
21.0
33.7
(T
C
= 25˚C)
900 MHz
of Demonstration Amplifier
-39.0
21.6
36.6
950 MHz
-36.5
21.6
39.3
Units
dBc
dB
%
1

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CGH09120F Summary of contents

Page 1

... Parameter 800 MHz Gain @ 43 dBm 19.2 ACLR @ 43 dBm -40.5 Drain Efficiency @ 43 dBm 31.0 Note: Measured in the CGH09120F-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8. 0.01 % Probability on CCDF. Features • UHF - 2.5 GHz Operation • Gain • -38 dBc ACLR • ...

Page 2

... Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature 1 Screw Torque Thermal Resistance, Junction to Case 2 Case Operating Temperature 2 Note: Refer to the Application Note on soldering at 1 Measured for the CGH09120F Electrical Characteristics (T Characteristics Symbol DC Characteristics 1 Gate Threshold Voltage V GS(th) Gate Quiescent Voltage V ...

Page 3

... Typical Pulse Performance Typical Pulsed Output Power, Drain Efficiency, and Gain vs Input Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit 1.0 A, Freq = 870 MHz, Pulse Width = 40 μS, Duty Cycle = Typical Pulsed Saturated Power vs Frequency of the CGH09120F measured in CGH09120F-TB Amplifier Circuit ...

Page 4

... Typical Performance Simulated Maximum Available Gain and K Factor of the CGH09120F 0.1 Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH09120F Rev 0.2 Preliminary ...

Page 5

... Typical Linear Performance Typical Small Signal Gain and Return Loss vs Frequency of the CGH09120F measured in CGH09120F-TB Amplifier Circuit 750 Typical WCDMA Performance Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit. 3GPP Test Model 1, 64 DPCH 67 % Clipping, 8.81 dB PAR @ 0.01 % ...

Page 6

... Typical WCDMA Digital Pre-Distortion (DPD) Performance WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power of the CGH09120F measured in CGH09120F-TB Amplifier Circuit. Two Channel WCDMA 7.5dB PAR with CFR V DS -20 Uncorrected -ACLR Corrected -ACLR -25 Uncorrected Drain Eff -30 -35 ...

Page 7

... Note Impedances are extracted from CGH09120F-TB demonstration 2 circuit and are not source and load pull data derived from transistor. Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. ...

Page 8

... CGH09120F-TB Demonstration Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH09120F Rev 0.2 Preliminary Bill of Materials Amplifier Circuit Description RES, 1/16W, 0603, 1%, 511 OHMS RES, 1/16W, 0603, 1%, 5 ...

Page 9

... CGH09120F-TB Demonstration CGH09120F-TB Demonstration Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH09120F Rev 0.2 Preliminary Schematic Amplifier Circuit Outline Amplifier Circuit Cree, Inc. ...

Page 10

... Typical Package S-Parameters for CGH09120F (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.9597 -179.25 600 MHz 0.9599 179.78 700 MHz 0.9600 178.96 800 MHz 0.9601 178.22 900 MHz 0.9601 177.54 1.0 GHz 0.9600 176.90 1.1 GHz 0.9600 176.28 1.2 GHz ...

Page 11

... Product Dimensions CGH09120F (Package Type — 440095) Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH09120F Rev 0.2 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

Page 12

... Cree, Wireless Devices 919.313.5639 Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH09120F Rev 0.2 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1 ...

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