3SK319 Renesas Electronics Corporation., 3SK319 Datasheet
3SK319
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3SK319 Summary of contents
Page 1
... Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier Features Low noise characteristics; (NF= 1.4 dB typ 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) Note: Marking is “YB–”. Rev.2.00 Aug 10, 2005 page ...
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... Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current ...
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... Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Ta (°C) Drain Current vs. Gate1 to Source Voltage 3 1.0 V G2S Gate1 to Source Voltage V Forward Transfer Admittance vs. Gate1 Voltage 3 0.4 0.8 Gate1 to Source Voltage V Rev ...
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... Noise Figure vs. Drain Current Drain Current I Noise Figure vs. Drain to Source Voltage Drain to Source Voltage V Noise Figure vs. Gate2 to Source Voltage Gate2 to Source Voltage V Rev.2.00 Aug 10, 2005 page 3.5 V ...
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... S11 Parameter vs. Frequency 1.5 0 –.2 –.4 –.6 –.8 –1 Test Condition : 10mA 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° 150° 180° –150° –120° –90° Test Condition : ...
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... S Parameter Freq. S11 (MHz) MAG. ANG. 50 1.000 –2.8 100 0.998 –5.8 150 0.997 –9.1 200 0.994 –12.2 250 0.994 –15.1 300 0.986 –18.5 350 0.978 –21.3 400 0.972 –24.1 450 0.969 –27.0 500 0.954 –29.7 550 0.955 –32.8 600 0.941 – ...
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... A-A Section Ordering Information Part Name 3SK319YB-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page Package Name MASS[Typ.] MPAK-4 / MPAK-4V 0.013g ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...