NE85001 Renesas Electronics Corporation., NE85001 Datasheet

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NE85001

Manufacturer Part Number
NE85001
Description
1 W C-band Power Gaas Fet N-channel Gaas Mes Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
DESCRIPTION
applications and so on.
has a PHS. (Plated Heat Sink)
FEATURES
• Class A operation
• High power output
• High reliability
SELECTION CHART
PART NUMBER
NE8500100(*)
NE8500100-WB
NE8500100-RG
NE8500199
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
*
** Specified at the condition at the last page.
WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
package
FORM
chip
PRELIMINARY DATA SHEET
28.5 min
28.5 min
Pout (**)
1 W C-BAND POWER GaAs FET
(dBm)
N-CHANNEL GaAs MES FET
PERFORMANCE SPECIFIED
NE8500100 (CHIP) (unit:
PHYSICAL DIMENSIONS
9.0 typ
9.0 typ
G
(dB)
L
(**)
NE85001 SERIES
FREQUENCY
USABLE
2.0 to 10
2.0 to 10
(GHz)
0.2 MAX.
4.3 ±0.2
4.0 MIN BOTH LEADS
1.7 ±0.15
m)
0.1
100
100
PACKAGE CODE-99 (unit: mm)
65
SOURCE
DRAIN
170
100
6.0 ±0.2
11.0 ±0.3
15.0 ±0.3
0.6 ±0.1
5.2 ±0.3
780
GaAs MES FET
GATE
1.0 ±0.1
©
146
2 PLACES
2.2 ±0.3
1.2
640
5.0 MAX.
4.0
1996

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NE85001 Summary of contents

Page 1

... PRELIMINARY DATA SHEET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’ ...

Page 2

... NE8500199 CHIP 99 TYP. MAX. MIN. TYP. MAX. 28.5 – – – – 2.0 –2.0 – 9 – – 9 NE85001 SERIES ˚ C ˚ ˚C C TEST CONDITIONS Vds = 2.5 V, Vgs = 0 V Vds = 2.5 V, Ids = 4 mA Vds = 2.5 V, Ids = Idss UNIT TEST CONDITIONS f = 7.2 GHz – dBm ...

Page 3

... TYPICAL CHARACTERISTICS ( ˚C) A NE8500199 OUTPUT POWER vs. INPUT POWER 200 mA set 7.2 GHz 300 250 I 200 Input Power - dBm in NE85001 SERIES (mA ...

Page 4

... NE85001 SERIES S 22 MAG ANG 0.065 –64.6 0.175 –126.4 0.221 –149.1 0.241 –159.2 0.260 –165.6 0.278 –170.8 0.296 –174.6 0.313 –177.8 0.317 – ...

Page 5

... The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. NE85001 SERIES 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 NE85001 SERIES M4 94.11 ...

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