HN1C03F TOSHIBA Semiconductor CORPORATION, HN1C03F Datasheet
HN1C03F
Manufacturer Part Number
HN1C03F
Description
Npn Epitaxial Type For Muting And Switching Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN1C03F.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN1C03F
Manufacturer:
toshiba
Quantity:
30 000
Part Number:
HN1C03F-B
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
HN1C03F-B(TE85R)
Manufacturer:
TOSHIBA
Quantity:
22 236
Company:
Part Number:
HN1C03FU
Manufacturer:
toshiba
Quantity:
30 000
Company:
Part Number:
HN1C03FU-B(TE85L,F
Manufacturer:
TOSHIBA
Quantity:
9 000
For Muting And Switching Applications
l Including two devices in SM6 (Super mini type with 6 leads)
l High emitter-base voltage: V
l High reverse h
l Low on resistance: R
Maximum Ratings
* Total rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Characteristic
FE
: reverse h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
ON
(Ta = 25° ° ° ° C) (Q1, Q2 Common)
= 1Ω (typ.)(IB = 5mA)
FE
EBO
= 150 (typ.)(V
= 25V (min)
Symbol
V
V
V
P
T
CBO
CEO
EBO
I
I
T
C
stg
HN1C03F
C
B
j
*
CE
=−2V, I
−55~150
Rating
300
300
150
50
20
25
60
1
C
=−4mA)
Unit
mW
mA
mA
°C
°C
V
V
V
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
2-3N1A
―
―
HN1C03F
2001-06-05
Unit in mm
Related parts for HN1C03F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
30 Watt Medical Power
Manufacturer:
HN Electronic Components
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
HN1C03F Summary of contents
Page 1
... I =−4mA Symbol Rating V 50 CBO V 20 CEO V 25 EBO I 300 300 * C T 150 j T −55~150 stg 1 HN1C03F Unit ― JEDEC mW ― EIAJ 2-3N1A TOSHIBA °C Weight: 0.015g °C 2001-06-05 Unit in mm ...
Page 2
... I = 3mA C B ― 2V 4mA CE C ― 6V 4mA CE C ― 10V 1MHz CB E ― ― ― Equivalent Circuit 2 HN1C03F Min Typ. Max ― ― 0.1 ― ― 0.1 200 ― 1200 ― 0.042 0.1 ― 0.61 ― ― 30 ― ― 4.8 7 ― 160 ― ...
Page 3
... Common) 3 HN1C03F 2001-06-05 ...
Page 4
... Common) 4 HN1C03F 2001-06-05 ...
Page 5
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 HN1C03F 000707EAA 2001-06-05 ...