Mechanical Data
Features
Maximum Ratings
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Power Dissipation (Note 3)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS31127 Rev. 2 - 2
Epitaxial Planar Die Construction
Complementary NPN Type Available (DZT491)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 3)
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2%.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
I
C
I
BE(on)
h
CBO
EBO
CES
f
obo
FE
T
www.diodes.com
Min
100
100
150
-80
-60
⎯
⎯
⎯
⎯
⎯
80
15
⎯
⎯
⎯
-5
1 of 4
Typ
Symbol
T
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
V
j
V
, T
I
P
CBO
CEO
EBO
CM
I
I
C
B
d
STG
Max
-100
-100
-100
-0.3
-0.6
300
-1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
TOP VIEW
MHz V
Unit
nA
nA
nA
pF
⎯
⎯
⎯
⎯
V
V
V
V
V
V
V
Schematic and Pin Configuration
PNP SURFACE MOUNT TRANSISTOR
V
V
V
I
I
I
I
I
V
V
V
V
I
I
V
C
C
E
C
C
C
C
CB
EB
CES
CE
CE
CE
CE
CE
CB
= 100μA
= -500mA, I
= 100μA
= 10mA
= -1A, I
= -1A, I
= -1A, V
4
-55 to +150
= -60V
= -4V
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, I
= -10V, f =1MHz
= -60V
Value
SOT-223
-200
-80
-60
-5
-1
-2
1
B
B
CE
= -100mA
= -100mA
C
C
C
C
C
= -1mA
= -500mA
= -1A
= -2A
= -5V
3
B
= -50mA, f = 100MHz
Test Conditions
= -50mA
2
BASE
DZT591C
1
1
COLLECTOR
EMITTER
2,4
3
© Diodes Incorporated
Unit
mA
°C
W
V
V
V
A
A
DZT591C