NSL35TT1 ON Semiconductor, NSL35TT1 Datasheet - Page 2
NSL35TT1
Manufacturer Part Number
NSL35TT1
Description
High Current Surface Mount Pnp Transistor Silicon Low Vce Sat Transistor For Battery Operated Applications
Manufacturer
ON Semiconductor
Datasheet
1.NSL35TT1.pdf
(7 pages)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector−Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
Base −Emitter Turn−on Voltage (Note 3)
Input Capacitance
Output Capacitance
Turn−On Time
Turn−Off Time
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
BI
B1
CB
CES
EB
EB
CB
= −0.1 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, I
= −100 mA, V
= −100 mA, V
= −250 mA, V
= −50 mA, I
= −100 mA, I
= −250 mA, I
= −250 mA, I
= −500 mA, I
= −150 mA, I
= −150 mA, V
= −50 mA, I
= I
= −4.0 Vdc)
= 0 V, f = 1.0 MHz)
= −35 Vdc, I
= 0 V, f = 1.0 MHz)
B2
= −30 Vdc)
= −50 mA, I
B
C
B
B
B
B
B
= −0.5 mA)
CE
CE
CE
CE
B
= −500 mA, R
E
C
E
= −1.0 mA)
= −2.5 mA)
= −5.0 mA)
= −50 mA)
= −20 mA)
= 0)
= 0)
= 0)
= 0)
= −1.0 V)
= −2.0 V)
= −2.0 V)
= −3.0 V)
C
= −500 mA, R
Characteristic
L
= 3.0 Ω)
L
(T
= 3.0 Ω)
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
I
I
BE(on)
C
h
CBO
EBO
CES
t
t
obo
on
off
FE
ibo
−5.0
Min
−35
−50
100
100
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typical
−0.090
−0.200
−0.320
−0.170
−0.270
−0.03
−0.03
−0.01
−0.81
−0.81
−7.0
−45
−65
180
180
150
45
18
40
70
−0.130
−0.350
−0.450
−0.350
−0.875
Max
−0.1
−0.1
−0.1
−0.9
−
−
−
−
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
pF
pF
ns
ns
V
V
V