BUW12F NXP Semiconductors, BUW12F Datasheet - Page 5
BUW12F
Manufacturer Part Number
BUW12F
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW12F.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
1997 Aug 14
handbook, full pagewidth
Silicon diffused power transistors
Mounted without heatsink compound and 30 5 N force on centre of package.
T
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
mb
< 25 C.
10
10
10
10
(A)
I C
10
10
1
2
1
2
3
4
1
I CM max
I C max
10
Fig.2 Forward bias SOAR.
I
= 0.01
BUW12F
BUW12AF
5
10
2
II
20 s
50 s
100 s
200 s
500 s
1 ms
2 ms
5 ms
10 ms
20 ms
DC
t p =
10
3
V CE (V)
MGB916
BUW12F; BUW12AF
10
4
Product specification