BUW13F NXP Semiconductors, BUW13F Datasheet - Page 8
BUW13F
Manufacturer Part Number
BUW13F
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW13F.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
1997 Aug 13
handbook, full pagewidth
handbook, full pagewidth
Silicon diffused power transistors
I
(1) V
T
(1) I
C
j
V BEsat
V CEsat
/I
= 25 C.
B
Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
V BE
(V)
(V)
= 5.
C
BE
2.0
1.5
1.0
0.5
1.6
1.4
1.2
1.0
0.8
= 15 A.
0
; T
10
0
j
= 25 C.
1
(2) I
(3) I
C
C
Fig.9 Base-emitter voltage as a function of base current; typical values.
(2) V
(3) V
= 10 A.
= 5 A.
1
BE
CE
; T
; T
j
j
= 100 C.
= 100 C.
2
1
(4) V
(1)
(2)
(3)
(4)
CE
(1)
(2)
(3)
; T
j
= 25 C.
8
3
10
4
BUW13F; BUW13AF
I C (A)
5
Product specification
I B (A)
MGB912
MGB915
10
6
2