BUW85 NXP Semiconductors, BUW85 Datasheet - Page 3
BUW85
Manufacturer Part Number
BUW85
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW85.pdf
(12 pages)
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
1997 Aug 14
V
V
V
I
I
I
I
I
P
T
T
V
V
V
I
I
h
f
SYMBOL
C
CM
B
BM
BM
j
CES
EBO
T
SYMBOL
FE
stg
j
CESM
CEO
EBO
tot
= 25 C unless otherwise specified.
CEOsust
CEsat
BEsat
Silicon diffused power transistors
collector-emitter sustaining voltage
collector-emitter saturation voltage
base-emitter saturation voltage
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
transition frequency
collector-emitter peak voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
base current (reversed; peak value) turn-off current
total power dissipation
storage temperature
junction temperature
BUW84
BUW85
BUW84
BUW85
BUW84
BUW85
PARAMETER
PARAMETER
V
open base
open collector
see Figs 4 and 5
t
T
I
L = 25 mH; see Figs 2 and 3
I
see Fig.7
I
see Fig.7
I
V
note 1
V
T
V
V
V
see Fig.10
V
f = 1 MHz
p
C
C
C
C
mb
j
BE
CEM
CEM
EB
CE
CE
CE
= 2 ms; see Figs 4 and 5
= 125 C; note 1
= 100 mA; I
= 0.3 A; I
= 1 A; I
= 1 A; I
= 0
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= V
= V
25 C; see Fig.8
2
CONDITIONS
CONDITIONS
CEMSmax
CEMSmax
B
B
= 200 mA;
= 200 mA
B
C
C
C
C
= 30 mA;
= 0
= 5 A; see Fig.10 15
= 100 mA;
Boff
= 200 mA;
; V
; V
= 0;
BE
BE
= 0;
= 0;
400
450
20
65
MIN.
MIN.
BUW84; BUW85
50
20
TYP.
800
1000
400
450
5
2
3
0.75
1
50
+150
150
1
Product specification
MAX.
0.8
1
1.1
200
1.5
1
100
MAX.
V
V
V
V
V
A
A
A
A
A
W
C
C
UNIT
V
V
V
V
V
mA
mA
MHz
UNIT
A