UNR6111 Panasonic Corporation of North America, UNR6111 Datasheet

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UNR6111

Manufacturer Part Number
UNR6111
Description
Silicon Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/
6110/611D/611E/611F/611H/611L)
Silicon PNP epitaxial planer transistor
For digital circuits
I
I
I
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
Resistance by Part Number
UNR6111
UNR6112
UNR6113
UNR6114
UNR6115
UNR6116
UNR6117
UNR6118
UNR6119
UNR6110
UNR611D
UNR611E
UNR611F
UNR611H
UNR611L
Absolute Maximum Ratings
Parameter
0.51kΩ
4.7kΩ
4.7kΩ
2.2kΩ
4.7kΩ
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
22kΩ
47kΩ
47kΩ
47kΩ
1kΩ
(R
1
Symbol
)
V
V
T
P
I
T
CBO
CEO
stg
C
T
j
(Ta=25˚C)
5.1kΩ
4.7kΩ
10kΩ
22kΩ
47kΩ
47kΩ
10kΩ
10kΩ
22kΩ
10kΩ
10kΩ
–55 to +150
(R
Ratings
2
–100
)
–50
–50
400
150
Note) The Part numbers in the Parenthesis show conventional part number.
Unit
mW
mA
˚C
˚C
V
V
Internal Connection
0.65 max.
0.45
(0.7)
2.5
B
+0.10
–0.05
±0.5
1
(4.0)
R1
6.9
R2
2
±0.1
3
2.5
±0.5
1.05
±0.05
MT-1-A1 Package
1 : Emitter
2 : Collector
3 : Base
E
C
0.45
Unit: mm
2.5
(0.8)
+0.10
–0.05
±0.1
1

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UNR6111 Summary of contents

Page 1

... I Features G Costs can be reduced through downsizing of the equipment and reduction of the number of parts. G MT-1 type package, allowing supply with the radial taping. I Resistance by Part Number ( UNR6111 10kΩ UNR6112 22kΩ G UNR6113 47kΩ G UNR6114 10kΩ UNR6115 10kΩ ...

Page 2

... UNR6119 UNR611H UNR6111/6112/6113/611L UNR6114 UNR6118/6119 Resis- UNR611D tance ratio UNR611E UNR611F UNR611H * h rank classification (UNR6115/6116/6117/6110) FE Rank 160 to 260 210 to 340 FE 2 UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L (Ta=25˚C) Symbol Conditions –50V CBO –50V CEO –6V EBO ...

Page 3

... P — 500 400 300 200 100 100 120 140 160 Ambient temperature Ta ( ˚C ) Characteristics charts of UNR6111 I — –160 Ta=25˚C I =–1.0mA B –140 –0.9mA –120 –0.8mA –0.7mA –100 –0.6mA –0.5mA –80 –0.4mA – ...

Page 4

... V ) Collector to emitter voltage UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L V — I CE(sat) C –100 – 30 –10 – 3 –1 – 0.3 Ta=75˚C 25˚C – 0.1 – 25˚C – ...

Page 5

... f=1MHz Ta=25˚ – 0.1 – 0.3 –1 – 3 –10 – 30 –100 ( V ) Collector to base voltage V CB UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L I — –10000 V =–5V O Ta=25˚C –3000 –1000 –300 –100 –30 –10 –3 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 ...

Page 6

... V ) Collector to emitter voltage UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L V — I CE(sat) C –100 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 – ...

Page 7

... f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L I — –10000 V =–5V O Ta=25˚C –3000 –1000 –300 –100 –30 –10 –3 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 ...

Page 8

... V ) Collector to emitter voltage UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L V — I CE(sat) C –100 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 – ...

Page 9

... f=1MHz Ta=25˚ –0.1 –0.3 –1 –3 –10 –30 –100 ( V ) Collector to base voltage V CB UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L I — –10000 V =–5V O Ta=25˚C –3000 –1000 –300 –100 –30 –10 –3 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 ...

Page 10

... V ) Collector to emitter voltage UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L V — I CE(sat) C –100 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 – ...

Page 11

... f=1MHz Ta=25˚ – 0.1 – 0.3 –1 – 3 –10 – 30 –100 ( V ) Collector to base voltage V CB UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L I — –10000 V = – Ta=25˚C –3000 –1000 –300 –100 – 30 –10 – 3 –1 –1.5 – 2.0 – 2.5 – 3.0 – 3.5 – ...

Page 12

... B –120 –0.8mA –80 –0.6mA –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 – Collector to emitter voltage UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L V — I CE(sat) C –100 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –3 – ...

Page 13

... Transistors with built-in Resistor C — f=1MHz Ta=25˚ –1 – 3 –10 – 30 –100 ( V ) Collector to base voltage V CB UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L V — –100 V = – 0.2V O Ta=25˚C –10 –1 – 0.1 –0.01 – 0.1 – 0.3 –1 – 3 –10 – 30 –100 ( mA ) Output current ...

Page 14

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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