UNR411M Panasonic Corporation of North America, UNR411M Datasheet

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UNR411M

Manufacturer Part Number
UNR411M
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR411x Series
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• New S type package, allowing supply with the radial taping
• UNR4110 (UN4110)
• UNR4111 (UN4111)
• UNR4112 (UN4112)
• UNR4113 (UN4113)
• UNR4114 (UN4114)
• UNR4115 (UN4115)
• UNR4116 (UN4116)
• UNR4117 (UN4117)
• UNR4118 (UN4118)
• UNR4119 (UN4119)
• UNR411D (UN411D)
• UNR411E (UN411E)
• UNR411F (UN411F)
• UNR411H (UN411H)
• UNR411L (UN411L)
• UNR411M
• UNR411N
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts
Parameter
0.51 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
1 kΩ
(R
Symbol
V
V
T
1
P
I
T
a
CBO
CEO
)
stg
C
T
j
= 25°C
−55 to +150
Rating
−100
−50
−50
300
150
Note) The part numbers in the parenthesis show conventional part number.
(UN411x Series)
5.1 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
47 kΩ
47 kΩ
SJH00018DED
(R
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
0.45
0.75 max.
+0.20
–0.10
1
B
(2.5) (2.5)
4.0
2
R
R
±0.2
1
2
3
2.0
±0.2
NS-B1 Package
C
E
0.7
1: Emitter
2: Collector
3: Base
0.45
±0.1
Unit: mm
+0.20
–0.10
1

Related parts for UNR411M

UNR411M Summary of contents

Page 1

... UNR4119 (UN4119) • UNR411D (UN411D) • UNR411E (UN411E) • UNR411F (UN411F) • UNR411H (UN411H) • UNR411L (UN411L) • UNR411M • UNR411N ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation ...

Page 2

UNR411x Series ■ Electrical Characteristics T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR4110/4115/4116/4117 cutoff current UNR4113 (Collector open) UNR4112/4114/411D/ 411E/411M/411N UNR4111 UNR411F/411H UNR4119 UNR4118/411L Forward current ...

Page 3

... Electrical Characteristics (continued) T Parameter Resistance ratio UNR411M UNR411N UNR4118/4119 UNR4114 UNR411H UNR411F UNR4111/4112/4113/411L UNR411E UNR411D Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  400 300 200 100 ...

Page 4

UNR411x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR4111 ...

Page 5

Characteristics charts of UNR4112  −160 = 25° −1 − 0.9mA − 0.8mA −120 − 0.7mA − 0.6mA − 0.5mA −80 − 0.4mA − 0.3mA − 0.2mA −40 − 0.1mA ...

Page 6

UNR411x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR4114 ...

Page 7

Characteristics charts of UNR4115  −160 = 25° −1 − 0.9 mA − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − ...

Page 8

UNR411x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR4117 ...

Page 9

Characteristics charts of UNR4118  −240 = 25° −200 = − 1 − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA −80 − ...

Page 10

UNR411x Series  MHz 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR411D ...

Page 11

Characteristics charts of UNR411E  −60 = −1 25° − 0.9 mA − 0.8 mA − 0.7 mA −50 −40 − 0.3 mA −30 − 0.2 mA − 0.6 mA ...

Page 12

UNR411x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR411H ...

Page 13

... MHz = 25° −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR411M  −140 = 25° −1 − 0.9 mA −120 − 0.8 mA − 0.7 mA −100 − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA − 0.2 mA − ...

Page 14

UNR411x Series  MHz = 25° −10 −20 −30 −40 0 Collector-base voltage V (V) CB Characteristics charts of UNR411N  −140 = −1.0 mA ...

Page 15

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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