JDV2S02S TOSHIBA Semiconductor CORPORATION, JDV2S02S Datasheet

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JDV2S02S

Manufacturer Part Number
JDV2S02S
Description
Toshiba Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
VCO for UHF band
·
·
·
Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C
Low series resistance: r
This device is suitable for use in a small-size tuner.
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured. V
Characteristics
Characteristics
H
(Ta = = = = 25°C)
s
= 0.6 Ω (typ.)
1V
/C
TOSHIBA Diode Silicon Epitaxial Planar Type
4V
(Ta = = = = 25°C)
= 2.0 (typ.)
Symbol
JDV2S02S
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
4V
/C
s
R
4V
-55~150
I
V
V
V
V
sig
R
Rating
R
R
R
R
150
10
= 1 mA
1
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
= 100 mVrms
Test Condition
Unit
¾
°C
°C
V
Weight: 0.0011 g (typ.)
JEDEC
JEITA
TOSHIBA
0.83
Min
1.8
1.8
10
¾
¾
Typ.
2.05
1.03
0.6
¾
¾
2
JDV2S02S
1-1K1A
2002-01-23
Max
1.23
2.3
2.2
0.8
¾
3
Unit: mm
Unit
nA
pF
¾
W
V

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JDV2S02S Summary of contents

Page 1

... MHz MHz ¾ 470 MHz 100 mVrms sig 1 JDV2S02S V JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Min Typ. Max ¾ ¾ 10 ¾ ¾ 1.8 2.05 2.3 0.83 1.03 1.23 1.8 2 2.2 ¾ ...

Page 2

... C – MHz V sig = 100 mVrms 1 0 Reverse voltage V R (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 2 JDV2S02S r – 470 MHz 1 10 Reverse voltage V R (V) 2002-01-23 ...

Page 3

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 JDV2S02S 000707EAA 2002-01-23 ...

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