JDV2S17S TOSHIBA Semiconductor CORPORATION, JDV2S17S Datasheet
JDV2S17S
Manufacturer Part Number
JDV2S17S
Description
Vco For The Uhf Band
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.JDV2S17S.pdf
(3 pages)
VCO for UHF Band Radio
•
•
•
Maximum Ratings
Electrical Characteristics
Marking
Note: Signal level when capacitance is measured: V
High Capacitance Ratio : C1
Low Series Resistance : r
This device is suitable for use in a small-size tuner.
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Characteristics
Characteristics
Ｊ
(Ta = 25°C)
s
TOSHIBA DIODE Silicon Epitaxial Planar Type
= 0.6 Ω (typ.)
V
/C4
(Ta = 25°C)
V
JDV2S17S
= 2.1 (typ.)
Symbol
T
V
T
stg
C1
R
Symbol
j
C1
C4
V
V
I
r
R
/C4
s
R
V
V
V
sig
−55~150
I
V
V
V
V
R
Rating
R
R
R
R
150
= 100 mVrms
10
= 1 µA
1
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
Test Condition
Unit
⎯
°C
°C
V
Weight: 0.0011 g (typ.)
JEDEC
JEITA
TOSHIBA
1.77
Min
0.8
10
⎯
⎯
2
Typ.
0.6
⎯
⎯
⎯
⎯
⎯
JDV2S17S
1-1K1A
2004-02-09
―
―
Max
2.01
0.75
1.0
2.2
⎯
3
Unit: mm
Unit
nA
pF
⎯
V
Ω
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JDV2S17S Summary of contents
Page 1
... MHz MHz ⎯ 470 MHz 100 mVrms sig 1 JDV2S17S Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Min Typ. Max Unit ⎯ ⎯ ⎯ ⎯ ⎯ 1.77 2 ...
Page 2
... C-V f=1MHz Vsig=100mVrms VR(V) rs-VR f=470MHz 1 VR(V) 2 JDV2S17S 6 10 2004-02-09 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 JDV2S17S 030619EAA 2004-02-09 ...