JDV2S22S TOSHIBA Semiconductor CORPORATION, JDV2S22S Datasheet
JDV2S22S
Manufacturer Part Number
JDV2S22S
Description
Vco For The Uhf Band
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.JDV2S22S.pdf
(3 pages)
VCO for UHF Band Radio
•
•
•
Maximum Ratings
Electrical Characteristics
Marking
Note: Signal level when capacitance is measured: V
High Capacitance Ratio : C
Low Series Resistance : r
This device is suitable for use in a small-size tuner.
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Characteristics
Characteristics
R
(Ta = 25°C)
s
1V
TOSHIBA DIODE Silicon Epitaxial Planar Type
= 0.5 ohm (typ.)
/C
3V
(Ta = 25°C)
JDV2S22S
= 1.82 (typ.)
Symbol
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
3V
/C
s
R
3V
sig
−55~150
I
V
V
V
V
R
Rating
R
R
R
R
150
= 100 mVrms
10
= 1 µA
1
= 10 V
= 1 V, f = 1 MHz
= 3 V, f = 1 MHz
= 1 V, f = 470 MHz
Test Condition
Unit
⎯
°C
°C
V
Weight: 0.0011 g (typ.)
JEDEC
JEITA
TOSHIBA
3.24
1.77
1.72
Min
10
⎯
⎯
Typ.
0.5
⎯
⎯
⎯
⎯
⎯
JDV2S22S
1-1K1A
2004-02-09
⎯
⎯
Max
3.62
1.99
1.92
0.62
⎯
3
Unit: mm
ohm
Unit
nA
pF
⎯
V
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JDV2S22S Summary of contents
Page 1
... MHz MHz ⎯ 470 MHz 100 mVrms sig 1 JDV2S22S Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Min Typ. Max Unit ⎯ ⎯ ⎯ ⎯ ⎯ 3.24 3 ...
Page 2
... CV-VR f=1MHz Vsig=100mVrms 3 4 VR(V) rs-VR f=470MHz 1 VR(V) 2 JDV2S22S 2004-02-09 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 JDV2S22S 030619EAA 2004-02-09 ...