JDV3S26CT TOSHIBA Semiconductor CORPORATION, JDV3S26CT Datasheet

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JDV3S26CT

Manufacturer Part Number
JDV3S26CT
Description
Toshiba Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
VCO for UHF Band Radio
Absolute Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C
Low series resistance: r
This device is suitable for use in small tuners.
Reverse voltage
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured. V
3
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristic
Characteristic
6 0
s
2
1
1V
= 0.37 Ω (typ.)
/C
TOSHIBA Diode Silicon Epitaxial Planar Type
4V
= 2.9 (typ.)
(Ta = 25°C)
(Ta = 25°C)
JDV3S26CT
Symbol
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
4V
/C
s
R
4V
−55~150
I
V
V
V
V
sig
Rating
R
R
R
R
R
150
10
= 1 μA
1
= 5 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
= 100 mVrms
Test Condition
Unit
°C
°C
V
Weight: 0.00075 g (typ.)
JEDEC
JEITA
TOSHIBA
15.35
5.27
2.82
Min
0.15±0.03
CST3
10
0.6±0.05
0.5±0.03
0.35
Typ.
0.37
JDV3S26CT
1.Anode
2.NC
3.Cathode
1-1S1A
0.05±0.03
2007-11-01
16.31
0.52
Max
5.6
1
3
Unit: mm
Unit
nA
pF
Ω
V

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JDV3S26CT Summary of contents

Page 1

... MHz MHz ⎯ 470 MHz 100 mVrms sig 1 JDV3S26CT 0.6±0.05 0.5±0.03 3 1 2 0.35 0.05±0.03 0.15±0.03 V 1.Anode 2.NC CST3 3.Cathode JEDEC ― JEITA ― TOSHIBA 1-1S1A Weight: 0.00075 g (typ.) Min Typ. ...

Page 2

... C – 100 REVERSE VOLTAGE V R (V) 1.0 f =1MHz 0.8 Ta=25 ℃ 0.6 0.4 0.2 0.0 0 JDV3S26CT r – =470MHz Ta=25 ℃ 1 REVERSE VOLTAGE V R (V) 2007-11-01 10 ...

Page 3

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 JDV3S26CT 20070701-EN GENERAL 2007-11-01 ...

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