JDV2S01E TOSHIBA Semiconductor CORPORATION, JDV2S01E Datasheet
JDV2S01E
Manufacturer Part Number
JDV2S01E
Description
Toshiba Diode Silicon Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.JDV2S01E.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
JDV2S01E
Manufacturer:
TOSHIBA
Quantity:
51 000
Part Number:
JDV2S01E
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
VCO for UHF band
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
Small Package
High Capacitance Ratio: C
Low Series Resistance: r
Reverse voltage
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured. V
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
Characteristics
F A
s
= 0.5 Ω (typ.)
1V
TOSHIBA Diode Silicon Epitaxial Planar Type
/C
4V
(Ta = 25°C)
= 2.0 (typ.)
(Ta = 25°C)
Symbol
JDV2S01E
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
4V
/C
s
R
4V
sig
−55~125
I
V
V
V
V
Rating
R
R
R
R
R
125
10
= 1 μA
= 100 mV
1
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
Test Condition
rms
Unit
⎯
°C
°C
V
Weight: 0.0014 g
JEDEC
JEITA
TOSHIBA
2.85
1.35
Min
1.8
10
⎯
⎯
Typ.
3.15
1.57
0.5
⎯
⎯
2
1-1G1A
JDV2S01E
2007-11-01
―
―
3.45
1.81
Max
0.7
⎯
⎯
3
Unit: mm
Unit
nA
pF
⎯
Ω
V
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JDV2S01E Summary of contents
Page 1
... MHz MHz 470 MHz 100 mV sig rms 1 JDV2S01E V °C °C JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g Min Typ. Max ⎯ 10 ⎯ ⎯ 2.85 3.15 3.45 1.35 1.57 1.81 ⎯ 1.8 2 ⎯ ...
Page 2
... C – MHz V sig = 100 m Vrms Reverse voltage V R (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 2 JDV2S01E r – 470 MHz 1 10 Reverse voltage V R (V) 2007-11-01 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 JDV2S01E 20070701-EN GENERAL 2007-11-01 ...