JDV2S02E TOSHIBA Semiconductor CORPORATION, JDV2S02E Datasheet

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JDV2S02E

Manufacturer Part Number
JDV2S02E
Description
Toshiba Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
JDV2S02E
Manufacturer:
AD
Quantity:
5 629
VCO for UHF band
·
·
·
Maximum Ratings
Electrical Characteristics
Marking
Small Package
High Capacitance Ratio: C
Low Series Resistance: r
Reverse voltage
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Note: Signal level when capacitance is measured. V
Characteristics
Characteristics
F B
(Ta = = = = 25°C)
s
= 0.60 Ω (typ.)
1V
TOSHIBA Diode Silicon Epitaxial Planar Type
/C
4V
(Ta = = = = 25°C)
= 2.0 (typ.)
Symbol
JDV2S02E
T
V
T
stg
C
R
Symbol
j
1V
C
C
V
I
r
R
1V
4V
/C
s
R
4V
sig
-55~125
I
V
V
V
V
R
Rating
R
R
R
R
125
10
= 1 mA
= 100 mV
1
= 10 V
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
= 1 V, f = 470 MHz
Test Condition
rms
Unit
¾
°C
°C
V
Weight: 0.0014 g
JEDEC
JEITA
TOSHIBA
0.83
Min
1.8
1.8
10
¾
¾
Typ.
2.05
1.03
0.6
¾
¾
2
JDV2S02E
1-1G1A
2002-01-16
Max
1.23
2.3
0.8
¾
¾
3
Unit: mm
Unit
nA
pF
¾
W
V

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JDV2S02E Summary of contents

Page 1

... MHz MHz 470 MHz 100 mV sig rms 1 JDV2S02E V °C °C JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g Min Typ. Max ¾ 10 ¾ ¾ 1.8 2.05 0.83 1.03 1.23 ¾ 1.8 2 ¾ ...

Page 2

... C – MHz V sig = 100 m Vrms 1 0 Reverse voltage V R (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 2 JDV2S02E r – 470 MHz 1 10 Reverse voltage V R (V) 2002-01-16 ...

Page 3

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 JDV2S02E 000707EAA 2002-01-16 ...

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