BB501C Renesas Electronics Corporation., BB501C Datasheet

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BB501C

Manufacturer Part Number
BB501C
Description
Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BB501CAS-TL
Manufacturer:
AMAZING
Quantity:
3 000
Part Number:
BB501CAS-TL
Manufacturer:
RENESAS
Quantity:
9 730
Features
Outline
Notes: 1. Marking is “AS–”.
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain;
PG = 21.5 dB typ. at f = 900 MHz
Low noise;
NF = 1.85 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4(SOT-343mod)
2. BB501C is individual type number of HITACHI BBFET.
Build in Biasing Circuit MOS FET IC
CMPAK-4
UHF RF Amplifier
BB501C
3
2
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-701C (Z)
4th. Edition
Nov. 1998

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BB501C Summary of contents

Page 1

... NF = 1.85 dB typ 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 Notes: 1. Marking is “AS–”. 2. BB501C is individual type number of HITACHI BBFET. BB501C UHF RF Amplifier Source 4 2 ...

Page 2

... BB501C Absolute Maximum Ratings ( Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics ( Item Symbol Drain to source breakdown V (BR)DSS voltage Gate1 to source breakdown V (BR)G1SS voltage Gate2 to source breakdown ...

Page 3

... Main Characteristics Test Circuit for Operating Items ( Gate 0.3 V AGC Input |yfs|, Ciss, Coss, Crss, NF, PG) D(op Gate 1 Drain Source Application Circuit RFC BBFET BB501C V G1 Output 3 ...

Page 4

... BB501C " ’ ¢ ’ ¢ ’ ¢ ...

Page 5

... Gate1 Voltage V (V) G1 Typical Output Characteristics G2S 200 1 2 Drain to Source Voltage Drain Current vs. Gate1 Voltage Gate1 Voltage BB501C ( ( ...

Page 6

... BB501C Drain Current vs. Gate1 Voltage Gate1 Voltage V Forward Transfer Admittance vs. Gate1 Voltage kHz Forward Transfer Admittance ...

Page 7

... Noise Figure vs. Gate Resistance G2S f = 900 MHz 0 100 10 20 Gate Resistance R Noise Figure vs. Drain Current G2S R = variable 900 MHz Drain Current I BB501C 50 100 ( (mA ...

Page 8

... BB501C Drain Current vs. Gate Resistance G2S Gate Resistance R G Noise Figure vs. Gate2 to Source Voltage 900 MHz Gate2 to Source Voltage V 8 Gate2 to Source Voltage 100 ...

Page 9

... Gain Reduction vs. Gate2 to Source Voltage G2S Gate2 to Source Voltage V G2S BB501C 0 (V) 9 ...

Page 10

... BB501C S11 Parameter vs. Frequency –.2 –.4 –.6 –1.5 –.8 –1 Test Condition G2S S12 Parameter vs. Frequency Scale: 0.002 / div. 90° 120° 150° 180° –150° ...

Page 11

... BB501C S22 MAG ANG 0.997 –2.0 0.998 –4.2 0.997 –6.0 0.995 –8.1 0.994 –10.2 0.992 –12.2 0.990 –14.2 0.987 –16.2 0.984 –18.1 0.981 –20.2 0.977 – ...

Page 12

... BB501C Package Dimensions 2.0 ±0.2 1.3 0.65 0.65 + 0.1 0.3 0.3 – 0. 0.1 0.3 0.4 – 0.05 0.65 0.6 1. 0.1 0.16 – 0.06 + 0.1 – 0. 0.1 + 0.1 – 0.05 Unit: mm CMPAK-4 Hitahi Code SC-82AB EIAJ — JEDEC ...

Page 13

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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