5LN01C Sanyo Semiconductor Corporation, 5LN01C Datasheet - Page 2

• Manufacturer Part Number: 5LN01C
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
7013A-013
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ”Miller” Charge
Diode Forward Voltage
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
12
10
11
9
8
7
6
5
4
3
2
0
0
0
I D =30mA
1
Parameter
0.95
1
2.9
3
0.2
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
4.0V
2
50mA
3
R DS (on) -- V GS
0.4
3.5V
I D -- V DS
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CP
4
0.1
5
0.6
6
Symbol
V SD
Qgs
Qgd
Qg
7
0.8
V GS =1.5V
8
V DS =10V, V GS =10V, I D =100mA
V DS =10V, V GS =10V, I D =100mA
V DS =10V, V GS =10V, I D =100mA
I S =100mA, V GS =0V
Ta=25 C
IT00054
IT00056
9
5LN01C
1.0
10
Conditions
Switching Time Test Circuit
P.G
100
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
4V
0V
1.0
PW=10 s
D.C. 1%
10
0
7
5
3
2
7
5
3
2
0.01
V IN
0
V IN
G
0.5
50
Gate-to-Source Voltage, V GS -- V
2
V DD =25V
min
D
Drain Current, I D -- A
Ta=75 C
1.0
3
R DS (on) -- I D
S
I D =50mA
R L =500
--25 C
I D -- V GS
25 C
5LN01C
Ratings
V OUT
5
1.5
typ
1.57
0.20
0.32
0.85
7
2.0
0.1
max
1.2
No.6555-2/4
V DS =10V
2.5
V GS =4V
Unit
2
nC
nC
nC
IT00055
IT00057
V
3.0
3