MBM29LV160TE70TN Meet Spansion Inc., MBM29LV160TE70TN Datasheet

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MBM29LV160TE/BE Data Sheet (Retired Product) This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet ...

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This page left intentionally blank MBM29LV160TE/BE_DS05-20883-7E July 31, 2007 ...

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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE ■ GENERAL DESCRIPTION The MBM29LV160TE/ 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 ...

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MBM29LV160TE (Continued) Any individual sector is typically erased and verified in 1.0 second (if already preprogrammed). The device also features sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV160TE/BE ...

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MBM29LV160TE ■ FEATURES • 0.23 μm Process Technology • Single 3.0 V Read, Program and Erase Minimizes system level power requirements • Compatible with JEDEC-standard Commands Uses same software commands as E • Compatible with JEDEC-standard Worldwide Pinouts 48-pin TSOP ...

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MBM29LV160TE ■ PIN ASSIGNMENTS N. RESET 12 N.C. 13 N.C. ...

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MBM29LV160TE (Continued) RY/BY N.C. N.C. RESET WE N.C. RY/BY 8 /MBM29LV160BE 70/90 CSOP (TOP VIEW (Marking side ...

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MBM29LV160TE ■ BLOCK DIAGRAM V CC RY/BY Buffer State BYTE Control RESET Command Register CE OE Low V Detector /MBM29LV160BE 70/90 RY/BY Erase Voltage Generator Program Voltage Generator Chip ...

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MBM29LV160TE ■ PIN DESCRIPTION Pin name RY/BY RESET BYTE N. ■ LOGIC SYMBOL 10 /MBM29LV160BE 70/90 MBM29LV160TE/BE Pin Configuration Function ...

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MBM29LV160TE ■ DEVICE BUS OPERATIONS MBM29LV160TE/BE User Bus Operation (BYTE = V Operation Auto-Select Manufacture Code * 1 Auto-Select Device Code * 1 Read * 3 Standby Output Disable Write (Program/Erase) Enable Sector Protection * Verify Sector ...

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MBM29LV160TE MBM29LV160TE/BE Standard Command Definitions Bus First Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word Read/Reset 1 XXXh F0h Byte Word 555h Read/Reset 3 Byte AAAh Word ...

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MBM29LV160TE • RA =Address of the memory location to be read. PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA =Address of the sector to be erased. The ...

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MBM29LV160TE ■ FLEXIBLE SECTOR-ERASE ARCHITECTURE • One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode. • One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte ...

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MBM29LV160TE MBM29LV160BE Bottom Boot Sector Architecture Sector Sector Size SA0 16 Kbytes or 8 Kwords SA1 8 Kbytes or 4 Kwords SA2 8 Kbytes or 4 Kwords SA3 32 Kbytes or 16 Kwords SA4 64 Kbytes or 32 Kwords SA5 ...

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MBM29LV160TE Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 0 ...

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MBM29LV160TE Sector Address Table (MBM29LV160BE) Sector Address SA0 SA1 SA2 SA3 SA4 ...

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MBM29LV160TE Description A Query-unique ASCII string “QRY” Primary OEM Command Set 02h: AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table V Min voltage (write/erase ...

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MBM29LV160TE ■ FUNCTIONAL DESCRIPTION • Read Mode The MBM29LV160TE/BE has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection ...

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MBM29LV160TE command sequence is illustrated in “MBM29LV160TE/BE Standard Command Definitions” Table. Byte represents the manufacture’s code and byte For the MBM29LV160TE/BE these two bytes are given in the Expanded Autoselect Code ...

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MBM29LV160TE ■ COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in an improper sequence will reset the device to the read mode. ...

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MBM29LV160TE The automatic programming operation is completed when the data on DQ bit at which time the device return to the read mode and addresses are no longer latched. (See “Hardware Sequence Flags” Table.) Therefore, the device requires that a ...

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MBM29LV160TE the sectors being erased. Multiple Sector Erase Time; [Sector Program Time (Preprogramming) + Sector Erase Time] × Number of Sector Erase. TM “Embedded Erase Algorithm” in “■FLOW CHART” illustrates the Embedded Erase command strings and bus operations. • Erase ...

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MBM29LV160TE (3) Extended Sector Protection In addition to normal sector protection, the MBM29LV160TE/BE has Extended Sector Protection as extended function. This function enable to protect sector by forcing V Unlike conventional procedure not necessary to force V RESET ...

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MBM29LV160TE • Data Polling The MBM29LV160TE/BE device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the devices ...

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MBM29LV160TE The DQ failure condition may also appear if a user tries to program a non blank location without erasing. In this 5 case the device locks out and never completes the Embedded Algorithm operation. Hence, the system never reads ...

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MBM29LV160TE • RY/BY Ready/Busy Pin The MBM29LV160TE/BE provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the ...

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MBM29LV160TE the V level is greater than V CC LKO to prevent unintentional writes when V If the Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) will need to be erased again prior to programming. • ...

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MBM29LV160TE ■ ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except A , OE, RESET * 1 9 Power Supply Voltage * OE, and RESET * 2 ...

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MBM29LV160TE ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V -0 +2.0 V +14.0 V +13 0 Note : This waveform is applied for A ...

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MBM29LV160TE ■ DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, RESET) CC ...

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MBM29LV160TE ■ AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time ...

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MBM29LV160TE • Write (Erase/Program) Operations Parameter Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Output Enable Hold Time Toggle and Data Polling Read Recover Time Before Write Read ...

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MBM29LV160TE (Continued) Parameter BYTE Switching High to Output Active Erase Time-out Time Erase Suspend Transition Time *1: Does not include the preprogramming time. *2: For Sector Protection operation. 34 /MBM29LV160BE 70/90 Symbol JEDEC Min Typ Max Min Typ Max Standard ...

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MBM29LV160TE ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle ■ PIN CAPACITANCE Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C Notes : • Test conditions ...

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MBM29LV160TE ■ TIMING DIAGRAM • Key to Switching Waveforms Address Outputs 36 /MBM29LV160BE 70/90 WAVEFORM INPUTS OUTPUTS Will Be Must Be Steady Steady Will May Change Change from from May Will ...

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MBM29LV160TE Address RESET High-Z Outputs Hardware Reset/Read Operation Timing Diagram Retired Product DS05-20883-7E_July 31, 2007 /MBM29LV160BE 70/ Address Stable t ACC t CE Outputs Valid 70/ ...

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MBM29LV160TE 3rd Bus Cycle 555h Address GHWL Data Notes: • address of the memory location to be programmed. • data to be programmed at ...

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MBM29LV160TE 3rd Bus Cycle 555h Address GHEL Data A0h Notes: • address of the memory location to be programmed. • data to be programmed ...

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MBM29LV160TE Address 555h GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase. Note : These waveforms are for the ×16 ...

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MBM29LV160TE OEH WE Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). 7 Data Polling during Embedded Algorithm Operation ...

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MBM29LV160TE Address OEH /DQ Data BUSY RY/ Stops toggling. (The device has completed the Embedded operation.) 6 Toggle Bit I during Embedded Algorithm Operation Timing Diagram Enter ...

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MBM29LV160TE CE WE RY/BY RY/BY Timing Diagram during Program/Erase Operation Timing Diagram WE RESET t RP RY/BY RESET, RY/BY Timing Diagram Retired Product DS05-20883-7E_July 31, 2007 /MBM29LV160BE 70/90 Rising edge of the last WE signal Entire programming or erase operations t ...

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MBM29LV160TE CE BYTE ELFH Timing Diagram for Word Mode Configuration CE BYTE t ELFL Timing Diagram for Byte Mode Configuration CE ...

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MBM29LV160TE 19, 18, 17 16, 15, 14, SPAX VLHT VLHT t ...

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MBM29LV160TE VIDR t VCS RESET CE WE RY/BY Temporary Sector Unprotection Timing Diagram 46 /MBM29LV160BE 70/90 t Program or Erase Command Sequence VLHT Unprotection Period Retired Product DS05-20883-7E_July 31, 2007 70/90 t VLHT 3 ...

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MBM29LV160TE VCS t RESET VLHT t t VIDR WC Add Data 60h SPAX : Sector Address to be protected SPAY : Next Sector Address to be ...

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MBM29LV160TE ■ FLOW CHART EMBEDDED ALGORITHM Increment Address Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. 48 /MBM29LV160BE 70/90 Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes ...

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MBM29LV160TE EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command) : 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. /MBM29LV160BE 70/90 Start Write Erase Command Sequence (See Below) Data ...

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MBM29LV160TE * : DQ is rechecked even /MBM29LV160BE 70/90 VA =Address for programming Start Read Byte ( Addr Yes DQ = Data ? ...

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MBM29LV160TE Read (DQ Addr. = “H” or “L” Read (DQ Addr. = “H” or “L” No Addr. = “H” or “L” Addr. = “H” or “L” Read toggle bit twice to determine whether it is toggling ...

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MBM29LV160TE Increment PLSCNT PLSCNT = 25 ? Pemove V Write Reset Command * : byte mode /MBM29LV160BE 70/90 Start Setup Sector Addr ...

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MBM29LV160TE *1 : All protected sectors are unprotected All previously protected sectors are protected once again. Temporary Sector Unprotection Algorithm Retired Product DS05-20883-7E_July 31, 2007 /MBM29LV160BE 70/90 Start RESET = Perform Erase or Program Operations RESET ...

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MBM29LV160TE FAST MODE ALGORITHM Increment Address Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. Embedded Programming Algorithm for Fast Mode 54 /MBM29LV160BE 70/90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling ...

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MBM29LV160TE Start RESET = V Wait to 4 µs Device Is Operating in No Extended Sector Temporary Sector Protect Entry ? Unprotection Mode To Setup Sector Protection Write XXXh/60h PLSCNT = 1 To Protect Sector Write 60h to Sector Address ...

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MBM29LV160TE ■ ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV160 T E DEVICE NUMBER/DESCRIPTION MBM29LV160 16 Mega-bit (2M × 8-Bit or 1M × 16-Bit) CMOS Flash ...

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MBM29LV160TE ■ PACKAGE DIMENSIONS Note Values do not include resin protrusion. 48-pin plastic TSOP (1) (FPT-48P-M19) Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. ...

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MBM29LV160TE 48-pin plastic TSOP (1) (FPT-48P-M20) LEAD No. 1 INDEX 24 0.10(.004) "A" * 18.40 ± (.724 ± 20.00 ± (.787 ± 2003 FUJITSU LIMITED F48030S-c-6 /MBM29LV160BE 70/90 Note Values do not include resin protrusion. ...

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MBM29LV160TE 48-pin plastic CSOP (LCC-48P-M03) 48 INDEX LEAD No 10.00±0.10(.394±.004) 0.40(.016) 0.08(.003) 9.20(.362)REF 2003 FUJITSU LIMITED C48056S-c-2-2 C /MBM29LV160BE 70/90 Note Resin protrusion (Each side : +0.15 (.006) Max) . Note ...

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MBM29LV160TE (Continued) 48-ball plastic FBGA (BGA-48P-M11) 8.00±0.20(.315±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48011S-c-5 /MBM29LV160BE 70/90 +0.15 1.05 .041 – 0.10 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 (4.00(.157)) (.236±.008) Dimensions in mm (inches) . Note : The values ...

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MBM29LV160TE MEMO Retired Product DS05-20883-7E_July 31, 2007 /MBM29LV160BE 70/90 70/90 61 ...

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MBM29LV160TE MEMO 62 /MBM29LV160BE 70/90 Retired Product DS05-20883-7E_July 31, 2007 70/90 ...

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MBM29LV160TE Revision History Revision DS05-20883-7E（July 31, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. /MBM29LV160BE 70/90 Retired Product DS05-20883-7E_July ...

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MBM29LV160TE 70/90 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. ...