NP110N055PUJ Renesas Electronics Corporation., NP110N055PUJ Datasheet - Page 5

• Manufacturer Part Number: NP110N055PUJ
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

1000
1000
100
100
10
0.1
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
1
5
4
3
2
1
0
-100
0.1
0
V
V
R
V
DD
GS
G
GS
= 0 Ω
V
SWITCHING CHARACTERISTICS
= 28 V
= 10 V
-50
F(S-D)
T
= 10 V
ch
- Channel Temperature - ° C
1
- Source to Drain Voltage - V
I
D
0.5
0
- Drain Current - A
50
10
0 V
100
1
100
V
I
Pulsed
D
GS
= 55 A
t
t
t
t
Pulsed
150
d(off)
d(on)
r
f
= 10 V
Data Sheet D19731EJ1V0DS
1000
200
1.5
100000
1000
10000
100
1000
10
60
50
40
30
20
10
100
1
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0.1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
di/dt = 100 A/μs
V
0.1
GS
20
V
f = 1 MHz
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
= 0 V
GS
I
F
= 0 V
V
- Diode Forward Current - A
40
DS
1
Q
G
- Drain to Source Voltage - V
V
- Gate Charge - nC
DD
60
V
1
= 44 V
DS
28 V
11 V
80
10
NP110N055PUJ
100 120 140 160
V
GS
100
10
I
D
C
C
C
= 110 A
iss
oss
rss
1000
100
12
10
8
6
4
2
0
5