MT4S03A TOSHIBA Semiconductor CORPORATION, MT4S03A Datasheet
MT4S03A
Manufacturer Part Number
MT4S03A
Description
Toshiba Transistor Silicon Npn Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.MT4S03A.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT4S03A(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
VHF~UHF Band Low Noise Amplifier Applications
•
•
Absolute Maximum Ratings
Marking
Microwave Characteristics
Low noise figure: NF = 1.4dB (f = 2 GHz)
High gain: Gain = 9dB (f = 2 GHz)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Transition frequency
Insertion gain
Noise figure
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
⎪S
⎪S
Symbol
Symbol
NF (1)
NF (2)
V
V
21e
21e
V
f
f
T
T
T
P
CBO
CEO
EBO
I
I
T
MT4S03A
stg
C
B
(1)
(2)
C
⎪
⎪
j
2
2
(1)
(2)
V
V
V
V
V
V
CE
CE
CE
CE
CE
CE
−55~125
Rating
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
150
125
10
40
10
5
2
1
C
C
C
C
C
C
Test Condition
= 5 mA
= 10 mA
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 7 mA, f = 2 GHz
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
3.5
⎯
⎯
2
7
7
Typ.
4.5
5.5
1.7
1.4
10
9
2-3J1C
MT4S03A
2007-11-01
―
―
Max
2.2
⎯
⎯
⎯
⎯
3
Unit: mm
GHz
Unit
dB
dB
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MT4S03A Summary of contents
Page 1
... mA GHz (2) V 21e mA GHz GHz NF ( MT4S03A Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Min Typ. Max Unit ⎯ 2 4.5 GHz ⎯ ⎯ ...
Page 2
... Symbol Test Condition = CBO EBO MHz MT4S03A Min Typ. Max Unit ⎯ ⎯ μA 0.1 ⎯ ⎯ μA 1 ⎯ 80 160 ⎯ (Note) 0.7 1.05 pF 2007-11-01 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 MT4S03A 20070701-EN 2007-11-01 ...