MT4S100T TOSHIBA Semiconductor CORPORATION, MT4S100T Datasheet
MT4S100T
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MT4S100T Summary of contents
Page 1
... Symbol Rating Unit CBO CEO V 1.2 V EBO 150 ° −55~150 °C stg 1 MT4S100T Unit:mm 1.2±0.05 0.9±0.05 1. Collector 2. Emitter 3. Base 4. Emitter TESQ JEDEC ― JEITA ― TOSHIBA 2-1G1B Weight: 0.0015 g 2007-11-01 ...
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... =1V EBO EB C hFE V =2V, I =10mA =2V, I =0, f=1MHz =2V, I =0, f=1MHz (Note MT4S100T Min Typ. Max Unit ⎯ GHz ⎯ 14 17.0 dB ⎯ 0.72 1.0 dB Min Typ. Max Unit ⎯ ⎯ 1 µA ⎯ ⎯ 1 µA ⎯ ...
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... Collector-current 1.5 1 (V) Collector-current I 35 VCE f=2GHz Ta=25° 100 Collector-current I 3 MT4S100T COMMON EMITTER VCE=2V Ta=25° 100 (mA 21e C VCE f=1GHz Ta=25°C 10 100 (mA VCE= 2V ...
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... CB 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 Collector-Base voltage 100 100 125 150 175 Ambient temperature T a 2.0 IE=0 1.8 f=1MHz 1.6 Ta=25°C 1.4 Cob 1.2 1.0 0.8 0.6 Cre 0.4 0.2 0 (V) Collector-current °C 4 MT4S100T NF,Ga VCE=2V 4 f=2GHz 2 Ta=25° 100 (mA) C 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 MT4S100T 20070701-EN GENERAL 2007-11-01 ...