MT4S200U TOSHIBA Semiconductor CORPORATION, MT4S200U Datasheet
MT4S200U
Related parts for MT4S200U
MT4S200U Summary of contents
Page 1
... Rating Unit CBO CEO V 1.2 V EBO 100 mW P 140 mW C(Note 1) T 150 ° −55~150 °C stg 1 MT4S200U Unit: mm 1.Collector 2.Emitter 3.Base USQ 4.Emitter JEDEC ― JEITA ― TOSHIBA 2-2K1E Weight: 0.006 g (typ.) 2007-11-01 ...
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... CBO =1V EBO EB C hFE V =3V, I =15mA =3V, I =0, f=1MHz =3V, I =0, f=1MHz (Note MT4S200U Min Typ. Max Unit ⎯ ⎯ 30 GHz ⎯ 15.0 17.5 dB ⎯ ⎯ 9.5 dB ⎯ 0.75 1.0 dB ⎯ ⎯ 1.7 dB Min Typ. Max Unit ⎯ ⎯ ...
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... Collector-current 0.8 1.0 1 (V) Collector-current VCE= 100 1 Collector-current I 3 MT4S200U COMMON EMITTER VCE= 100 (mA 2GHz 21e C VCE=3v VCE=2v f=2GHz Ta=25℃ 10 100 (mA VCE=3V Ta=25 ℃ 10 100 ...
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... 0.40 IE=0,f=1MHz,Ta=25 ℃ 0.35 0.30 Cob 0.25 0.20 0.15 Cre 0.10 0.05 0.00 0.1 1 Collector-Base voltage V CB 5.0 4.0 3.0 5.8GH ｚ 2.0 1.0 0 (V) Collector-current I 4 MT4S200U NF,Ga-I C 25.0 5.8GHz 20.0 NF 2GHz Ga 15.0 Ga 2GHz NF 10.0 5.0 VCE=3v Ta=25 ℃ 0.0 10 100 (mA) C 2007-11-01 ...
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... Input Power [dB(mW)] Output Power vs Input Power -10 -15 - Pout -10 -20 -30 -40 -50 -60 -70 - -30 5 MT4S200U VCE=3v Ic=15mA f=5.8GHz Zs=ZL=50ohm - Input Power [dB(mW)] IM3 (5.8GHz) IM3 VCE=3v,Ic=15mA f=5.8GHz,5.801GHz -20 - Input Power [dB(mW)] 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 MT4S200U 20070701-EN GENERAL 2007-11-01 ...