STP22NE10L ST Microelectronics, Inc., STP22NE10L Datasheet
STP22NE10L
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STP22NE10L Summary of contents
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... Feature The resulting avalanche manufacturing INTERNAL SCHEMATIC DIAGRAM = 100 starting STP22NE10L - 22A TO-220 POWER MOSFET TO-220 Value 100 100 0.6 250 -65 to 175 175 =22A , V = 50V D DD Unit V ...
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... STP22NE10L THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Symbol Parameter ...
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... (Inductive Load, see fig. 5) Test Conditions di/dt = 100 150 DD j (see test circuit, fig. 5) Thermal Impedance STP22NE10L Min. Typ. Max Min. Typ. Max Min. Typ. Max 1.5 ...
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... STP22NE10L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STP22NE10L 5/8 ...
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... STP22NE10L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... MIN. 4.60 0.173 1.32 0.048 2.72 0.094 1.27 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 16.4 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 STP22NE10L inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 L4 P011C 7/8 ...
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... STP22NE10L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...