STP22NE10L ST Microelectronics, Inc., STP22NE10L Datasheet

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STP22NE10L

Manufacturer Part Number
STP22NE10L
Description
N-channel 55V - 0.07 Ohm - 22A StripFET Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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Part Number:
STP22NE10L
Manufacturer:
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Part Number:
STP22NE10L
Manufacturer:
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0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
Size "
transistor shows extremely high packing density
for
characteristics and less critical alignment steps
therefore
reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
November 1999
STP22NE10L
Symbol
E
TYPICAL R
LOW THRESHOLD DRIVE
LOGIC LEVEL DEVICE
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
I
V
Pulse width limited by safe operating area
DM
V
V
T
P
AS
DGR
I
I
T
GS
st g
DS
D
D
tot
TYPE
(
low
j
(
1
)
strip-based
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
®
on-resistance,
a
DS(on)
100 V
V
remarkable
= 0.07
DSS
unique
process.
N - CHANNEL 100V - 0.07
< 0.085
Parameter
rugged
R
DS(on)
c
"Single
GS
= 25
GS
The
manufacturing
= 20 k )
= 0)
o
C
avalanche
c
c
resulting
22 A
Feature
= 25
= 100
I
D
o
C
o
STripFET
C
(
1
starting T
j
= 25
INTERNAL SCHEMATIC DIAGRAM
o
C, I
D
=22A , V
POWER MOSFET
-65 to 175
DD
Value
100
100
250
175
0.6
22
14
88
90
STP22NE10L
TO-220
= 50V
20
- 22A TO-220
1
2
3
W/
Unit
mJ
o
o
W
V
V
V
A
A
A
C
C
o
C
1/8

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STP22NE10L Summary of contents

Page 1

... Feature The resulting avalanche manufacturing INTERNAL SCHEMATIC DIAGRAM = 100 starting STP22NE10L - 22A TO-220 POWER MOSFET TO-220 Value 100 100 0.6 250 -65 to 175 175 =22A , V = 50V D DD Unit V ...

Page 2

... STP22NE10L THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Symbol Parameter ...

Page 3

... (Inductive Load, see fig. 5) Test Conditions di/dt = 100 150 DD j (see test circuit, fig. 5) Thermal Impedance STP22NE10L Min. Typ. Max Min. Typ. Max Min. Typ. Max 1.5 ...

Page 4

... STP22NE10L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STP22NE10L 5/8 ...

Page 6

... STP22NE10L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... MIN. 4.60 0.173 1.32 0.048 2.72 0.094 1.27 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 16.4 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 STP22NE10L inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 L4 P011C 7/8 ...

Page 8

... STP22NE10L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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