STP30NE03LFP ST Microelectronics, Inc., STP30NE03LFP Datasheet

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STP30NE03LFP

Manufacturer Part Number
STP30NE03LFP
Description
N - Channel 30v - 0.028 Ohm - 30a To-220/to-220fp StripFET Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
Size ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
June 1999
STP30NE03L
STP30NE03LF P
Symb ol
I
TYPICAL R
100% AVALANCHE TESTED
LOW GATE CHARGE
LOW THRESHOLD DRIVE
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
V
DM
V
V
V
T
P
DGR
I
I
T
ISO
s tg
DS
GS
D
D
tot
( )
TYPE
j
N - CHANNEL 30V - 0.028
Drain-source Voltage (V
Drain- gate Voltage (R
G ate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
T otal Dissipation at T
Derating Factor
Insulation W ithstand Voltage (DC)
Storage T emperature
Max. O perating Junct ion T emperature
DS(on)
= 0.028
V
30 V
30 V
DSS
unique
< 0.04
< 0.04
R
Parameter
c
”Single
DS( on )
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
Feature
30 A
17 A
= 25
= 100
I
D
o
C
o
STripFET
C
- 30A TO-220/TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ST P30NE03L
TO-220
0.47
120
30
21
70
STP30NE03LFP
POWER MOSFET
1
-65 to 175
2
STP30NE03L
3
Value
175
30
30
STP30NE03L FP
20
2000
0.17
TO-220FP
17
12
68
25
1
W/
Unit
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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STP30NE03LFP Summary of contents

Page 1

... T otal Dissipation tot c Derating Factor V Insulation W ithstand Voltage (DC) ISO T Storage T emperature Max. O perating Junct ion T emperature Pulse width limited by safe operating area June 1999 STP30NE03LFP - 30A TO-220/TO-220FP STripFET Feature TO-220 INTERNAL SCHEMATIC DIAGRAM ST P30NE03L = ...

Page 2

STP30NE03L/FP THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l I Avalanche Current, Repetitive or Not-Repetitive AR ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter t Turn-on Delay T ime d(on) t Rise Time r Q Total G ate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbo l Parameter t Turn-off Delay ...

Page 4

STP30NE03L/FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP30NE03L/FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

STP30NE03L/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

TO-220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 8

STP30NE03L/FP TO-220FP MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 ...

Page 9

Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which ...

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