STP40N03L-20 ST Microelectronics, Inc., STP40N03L-20 Datasheet

no-image

STP40N03L-20

Manufacturer Part Number
STP40N03L-20
Description
Old PRODUCT: Not Suitable For Design-in
Manufacturer
ST Microelectronics, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP40N03L-20
Manufacturer:
ST
Quantity:
8 000
Part Number:
STP40N03L-20
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP40N03L-20
Manufacturer:
ST
0
Part Number:
STP40N03L-20������
Manufacturer:
ST
0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
March 1996
STP40N03L-20
Symbol
dV/dt(
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175
HIGH dV/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
POWER MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCRONOUS RECTIFICATION
V
DM
V
V
T
P
DGR
I
I
T
DS
GS
stg
D
D
tot
TYPE
( )
j
o
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
C OPERATING TEMPERATURE
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS(on)
V
30 V
= 0.016
DSS
< 0.02
Parameter
R
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
40 A
= 25
= 100
I
D
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
-65 to 175
STP40N03L-20
Value
160
175
0.6
30
30
40
28
90
TO-220
6
15
PRELIMINARY DATA
1
2
3
W/
V/ns
Unit
o
o
W
V
V
V
A
A
A
C
C
o
C
1/7

Related parts for STP40N03L-20

STP40N03L-20 Summary of contents

Page 1

... Pulse width limited by safe operating area March 1996 N - CHANNEL ENHANCEMENT MODE I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 STP40N03L-20 PRELIMINARY DATA TO-220 Value Unit 160 0.6 W/ ...

Page 2

... STP40N03L-20 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting Repetitive Avalanche Energy ...

Page 3

... Test Conditions di/dt = 100 150 (see test circuit, figure JMAX STP40N03L-20 Min. Typ. Max 100 200 = Min. Typ. Max 100 Min. Typ. ...

Page 4

... STP40N03L-20 PSPICE PARAMETERS SUBCIRCUIT COMPONENTS Symbol S1 (V14_16<0) (See Power Mosfet Model Subcircuit) S2 (V16_11<0) (See Power Mosfet Model Subcircuit) LD Drain Inductance LG Gate Inductance LS Source Inductance RDRAIN Drain Resistance RGATE Gate Resistance CGD Gate Drain Capacitance CGS Gate Source Capacitance ALFA Drift Coeficient ...

Page 5

... PSPICE NETLIST OF THE SUBCIRCUIT .SUBCKT STP40N03L- *VALUE OF THE PACKAGE INDUCTANCES 10n 10n *RESISTANCE OF THE GATE POLYSILICON *EPY AND DRIFT RESISTANCES 1.9e-02 EDRI 14 15 POLY(2) (13 14) (13 11 1e-3 *CAPACITANCE GATE SOURCE CGS 16 11 1.90n ...

Page 6

... STP40N03L-20 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 6/7 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. MAX. 0.173 0.181 0.048 0.051 0.094 0.107 0.050 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.203 ...

Page 7

... SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S STP40N03L-20 7/7 ...

Related keywords