STGB3NB60FD ST Microelectronics, STGB3NB60FD Datasheet - Page 3

• Manufacturer Part Number: STGB3NB60FD
• Description: (STGP3NB60F / STGD3NB60F / STGF3NB60FD / STGB3NB60FD) N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH IGBT
• Manufacturer: ST Microelectronics

SWITCHING PARAMETERS
COLLECTOR-EMITTER DIODE (“D” VERSION)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
(di/dt)
E
E
t
t
t
t
t
r
r
C
C
C
Eon
(**)Losses include Also the Tail (Jedec Standardization)
Q
Q
d(on)
(V
d
off
(V
d
off
I
2. Pulse width limited by max. junction temperature.
E
E
Q
g
Q
V
rrm
(
(
t
t
t
oes
t
res
t
t
ies
rr
off
off
fs
ge
gc
c
c
r
f
ts
f
ts
(**)
(**)
g
off
off
rr
f
on
)
)
)
)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD
Parameter
Parameter
V
V
V
V
R
V
V
V
R
Tj = 25 °C
V
R
Tj = 125 °C
I
I
I
Tj =125°C, di/dt = 100 A/ s
V
f
f
f
CE
CE
GE
CC
CC
GE
cc
cc
G
GE
GE
= 1.5 A
= 1.5 A, Tj = 125 °C
= 3 A ,V
CE
= 10 , V
= 480 V, I
= 480 V, I
= 480 V, I
= 25 V, Ic = 3 A
= 480 V, I
= 15 V
= 480 V, I
= 15 V,Tj = 125°C
= 10
= 10
= 25 V, f = 1 MHz, V
Test Conditions
Test Conditions
R
= 35 V,
, V
, V
GE
C
C
C
C
C
GE
GE
= 3 A,
= 3 A,
= 3 A R
= 15 V
= 3 A,
= 3 A
= 15 V
= 15 V
G
=10
GE
= 0
Min.
Min.
Typ.
12.5
Typ.
1.31
0.95
230
840
220
105
150
125
149
490
174
230
305
295
326
1.5
2.7
33
16
31
60
45
70
2
6
8
4
Max.
Max.
1.8
20
A/µs
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
J
J
J
J
J
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