STGB3NB60K ST Microelectronics, STGB3NB60K Datasheet - Page 3

• Manufacturer Part Number: STGB3NB60K
• Description: (STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
• Manufacturer: ST Microelectronics

SWITCHING PARAMETERS
COLLECTOR-EMITTER DIODE (“D” VERSION)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
(di/dt)
E
E
t
t
t
r
t
r
t
C
tscw
C
Eon
(**)Losses include Also the Tail (Jedec Standardization)
C
Q
d
off
d
off
Q
d(on)
(V
(V
I
2. Pulse width limited by max. junction temperature.
E
E
Q
g
Q
V
(
(
t
rrm
t
t
oes
t
t
t
res
ies
rr
fs
ge
gc
c
off
c
off
r
f
(**)
ts
f
(**)
ts
rr
g
off
off
f
)
)
on
)
)
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Short Circuit Withstand Time
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
V
V
V
V
Tj = 125°C , R
V
R
V
V
V
R
Tj = 25 °C
V
R
Tj = 125 °C
I
I
I
Tj =125°C, di/dt = 100A/ s
V
f
f
f
CE
CE
GE
ce
CC
CC
GE
cc
cc
G
GE
GE
= 1.5 A
= 1.5 A, Tj = 125 °C
= 3 A ,V
CE
= 10 , V
= 0.5 V
= 480 V, I
= 480 V, I
= 480 V, I
= 25V, Ic = 3 A
= 480V, I
= 15V
= 480 V, I
= 15 V,Tj = 125°C
= 10
= 10
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
R
BR(CES)
= 35 V,
, V
, V
GE
C
C
C
C
G
C
GE
GE
= 3 A,
= 3 A,
= 3 A,
= 3 A R
= 15 V
= 3 A
= 10
= 15 V
= 15 V
, V
GE
G
=15V
=10
GE
= 0
Min.
Min.
10
Typ.
26.5
Typ.
1.31
0.95
218
520
122
100
210
100
120
165
195
2.4
5.8
3.3
7.5
2.7
33
14
14
30
33
58
85
66
45
70
5
Max.
Max.
1.8
18
A/µs
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
J
J
J
J
J
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