SDB06S60SMD Infineon Technologies Corporation, SDB06S60SMD Datasheet
SDB06S60SMD
Related parts for SDB06S60SMD
SDB06S60SMD Summary of contents
Page 1
Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior Ideal diode for Power Factor F) ...
Page 2
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min. footprint 2 P-TO263-3- cooling area P-TO252-3-1: @ min. footprint 2 P-TO252-3- ...
Page 3
Electrical Characteristics,at T Parameter AC Characteristics Total capacitive charge =400V, I =6A /dt=200A/µ Switching time =400V, I =6A /dt=200A/µ Total capacitance =0V, T =25°C, f=1MHz ...
Page 4
Power dissipation tot 100 120 140 3 Typ. forward characteristic = ...
Page 5
Typ. reverse current vs. reverse voltage = µ 150°C 125°C 100°C 25° 100 150 200 250 300 350 400 450 ...
Page 6
Typ. capacitive charge vs. current slope / parameter 150 ° *0 ...
Page 7
Preliminary data P-TO220-3-1 P-TO220-3-1 symbol min A 9.70 B 14.88 C 0.65 D 3.55 E 2.60 F 6.00 G 13.00 H 4.35 K 0. 4.30 P 1.17 T 2.30 TO-220-3-45 (P-TO220SMD) symbol min A 9.80 B ...
Page 8
Preliminary data MAX/MIN-dimensions are given in inches[mm] Page 8 SDP06S60, SDB06S60 SDT06S60 2001-12-04 ...
Page 9
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...